| Patents granted for our research [Please
contact me at djena@cornell.edu if you have questions or an interest in
licensing these patents] |
| Patent # |
Year |
Patent ID |
Title |
|
|
|
|
|
|
|
|
| 16 |
2025 |
US12243921B2 |
Vertical gallium oxide
(Ga2O3) power FETs |
|
| 15 |
2024 |
US12161052B2 |
Epitaxial
semiconductor/superconductor heterostructures |
|
| 14 |
2024 |
US12051474B2 |
Resistive electrodes on
ferroelectric devices for linear piezoelectric programming |
|
| 13 |
2024 |
US11894468B2 |
High voltage gallium
oxide (Ga2O3) trench MOS barrier schottky and methods of fabricating same |
|
| 12 |
2023 |
US11710785B2 |
RF high-electron-mobility
transistors including group III-N stress neutral barrier layers with high
breakdown voltages |
| 11 |
2022 |
US11522080B2 |
High-voltage p-channel
FET based on III-nitride heterostructures |
|
| 10 |
2022 |
US11476383B2 |
Platforms enabled by
buried tunnel junction for integrated photonic and electronic systems |
|
| 9 |
2021 |
US11158709B2 |
Polarization-induced 2D
hole gases for high-voltage p-channel transistors |
|
| 8 |
2021 |
US11043612B2 |
Light emitting diodes
using ultra-thin quantum heterostructures |
|
| 7 |
2021 |
US10957817B2 |
Polarization field
assisted heterostructure design for efficient deep ultra-violet light
emitting diodes |
|
| 6 |
2018 |
US9954085B2 |
Group III-Nitride
compound heterojunction tunnel field-effect transistors and methods for
making the same |
| 5 |
2018 |
US9905647B2 |
Group III-nitride
compound heterojunction tunnel field-effect transistors and methods for
making the same |
| 4 |
2016 |
US9362389B2 |
Polarization induced
doped transistor |
|
| 3 |
2014 |
US8836446B2 |
Methods and apparatus for
terahertz wave amplitude modulation |
|
| 2 |
2014 |
US8835998B2 |
Compositionally graded
heterojunction semiconductor device and method of making same |
|
| 1 |
2009 |
US7525130B2 |
Polarization-doped field
effect transistors (POLFETS) and materials and methods for making the same |
|
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