Journal Papers [Category: Oxide Electronics]

· Get the preprints of papers posted on the arXivs.

· We have published in IEEE journals, IEDM/DRC, APL, Science, Nature journals, Physical Review journals, JAP, Nano Letters, etc.

· The complete list of papers below is sorted into categories here:

GaN materials and Devices

Deep-UV photonics

2D Crystals

Oxide Electronics

Sub-Boltzmann Switches

Theory and Modeling

Highlights of our contributions to the area of Oxide Electronics

6) 2016: Theoretical and experimental determination of the intrinsic electron mobility limits of Ga₂O₃.

5) 2016: Demonstration of SmTiO₃/SrTiO₃ perovskite heterostructure FinFETs.

4) 2015: Experimental electrical observation of ferroelectric effect in compressively strained SrTiO₃.

3) 2015: Optically probed the Mott-Hubbard gap of GdTiO₃.

2) 2014: First demonstration of a high-voltage nanomembrane oxide transistor with Ga₂O₃ with ‘high’ mobility.

1) 2014: Identified the intrinsic mobility limiting mechanisms in the prototype perovskite oxide SrTiO₃.

2016

187) Intrinsic electron mobility limits in beta-Ga₂O₃

(N. Ma et al.,

Appl. Phys. Lett., 109, 212101 2016)

182) Large electron concentration modulation using capacitance enhancement in SrTiO₃/SmTiO₃ Fin-FETs

(A. Verma et al.,

Appl. Phys. Lett., 108, 183509 2016)

2015

174) Ferroelectric transition in compressively strained SrTiO₃ thin films

(A. Verma et al.,

Appl. Phys. Lett., 107, 192908 2015)

171) Determination of the Mott-Hubbard gap in GdTiO₃

(L. Bjaalie et al.,

Physical Review B, 92, 085111 2015)

165) Anisotropic Thermal Conductivity in Single-Crystal beta-Gallium Oxide

(Z. Guo et al.,

Appl. Phys. Lett., 106, 111909 2015)

2014

155) Au-gated SrTiO₃ field-effect transistors with large electron concentration and current modulation

(A. Verma, S. Raghavan, S. Stemmer, and D. Jena,

Appl. Phys. Lett., 105, 113512, 2014)

148) Intrinsic Mobility Limiting Mechanisms in Strontium Titanate

(A. Verma, A. Kadjos, T. Cain, S. Stemmer, and D. Jena,

Phys. Rev. Lett., 112, 216601, 2014)

146) High-Voltage Field-Effect Transistors with Wide-Bandgap Ga₂O₃ Nanomembranes

(Wan Sik Hwang et al.,

Appl. Phys. Lett., 104, 203111, 2014)

2013

2012

2011

2010

2009

2008

2007

2006

2004

As a graduate student @ UC Santa Barbara (Fall 1998 - Spring 2003)

2003

2002

2001

2000

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