Journal Papers [Category: Deep-UV Photonics]

· Get the preprints of papers posted on the arXivs.

· We have published in IEEE journals, IEDM/DRC, APL, Science, Nature journals, Physical Review journals, JAP, Nano Letters, etc.

· The complete list of papers below is sorted into categories here:

GaN materials and Devices

Deep-UV photonics

2D Crystals

Oxide Electronics

Sub-Boltzmann Switches

Theory and Modeling

Highlights of our contributions to the area of Deep-UV Photonics

7) 2016: Demonstration of sub 230 nm emission from GaN quantized heterostructures for deep-UV LEDs by MBE.

6) 2014: First demonstration of a tunnel-injection deep-UV quantum-dot LED with polarization-induced p-type doping.

5) 2013: First demonstration of a tunnel-injection deep-UV quantum-dot LED.

4) 2011: First demonstration of a N-polar quantum-well LED with polarization-induced p-type hole injector.

3) 2010: First demonstration of polarization-induced p-type doping in wide-bandgap semiconductors.

2) 2009: Uncovered the physics of polarization-induced Zener tunnel junctions in wide-bandgap heterostructures.

1) 2002: First demonstration of polarization-induced n-type doping in wide-bandgap semiconductors.

2016

188) Deep-UV Emission from Ultra-Thin GaN/AlN Heterostructures

(D. Bayerl et al.,

Appl. Phys. Lett., accepted, to appear 2016)

181) Sub-230 nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski-Krastanov mode

(S. M. Islam et al.,

Jap. J. Appl. Phys., 55, 05FF06 2016)

2015

170) Localized surface phonon polariton resonances in polar gallium nitride

(K. Feng et al.,

Applied Physics Letters, 107, 081108 2015)

162) Dual optical marker Raman characterization of strained GaN channels on AlN using AlN/GaN/AlN quantum wells and ¹⁵N isotopes

(M. Qi et al.,

Appl. Phys. Lett., 106, 041906 2015)

2014

139) Tunnel-Injection Quantum Dot deep-UV LEDs with Polarization-Induced Doping in III-Nitride Heterostructures

(J. Verma et al.,

Appl. Phys. Lett., 104, 021105 2014)

2013

114) Tunnel-injection GaN quantum-dot ultraviolet light-emitting diodes

(J. Verma et al.,

Appl. Phys. Lett., 101, 032109 2013)

2012

87) Charge transport in non-polar and semi-polar III-V nitride heterostructures

(A. Konar, A. Verma, T. Fang, P. Zhao, R. Jana, and D. Jena,

Semicond. Sci. Technol., 27, 024018, 2012)

2011

81) N-Polar III-nitride quantum well light emitting diodes with polarization-induced doping

(J. Verma, J. Simon, V. Protasenko, T. Kosel, H. Xing, and D. Jena,

Appl. Phys. Lett., 99, 171104, 2011)

74) Stark-Effect Scattering in Rough Quantum Wells

(R. Jana, and D. Jena

Appl. Phys. Lett., 99, 012104 2011)

68) Polarization Engineering in Group-III Nitride Heterostructures: New Opportunities for Device Design

(D. Jena, J. Simon, K. Wang, Y. Cao, K. Goodman, J. Verma, S. Ganguly, G. Li, K. Karda, V. Protasenko, C. Lian, T. Kosel, P. Fay, and H. Xing

Phys. Stat. Solidi.(a), 208, 1511 2011)

67) MBE growth of high conductivity single and multiple AlN/GaN heterojunctions

(Y. Cao, K. Wang, G. Li, T. Kosel, H. Xing, and D. Jena

J. Cryst. Growth, 323, 529 2011)

66) Green luminescence of InGaN nanowires grown on Silicon substrates by MBE

(K. Goodman, V. Protasenko, J. Verma, T. Kosel, H. Xing, and D. Jena,

J. Appl. Phys., 109, 084336 2011)

2010

63) High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

(G. Li, Y. Cao, H. Xing, and D. Jena

Appl. Phys. Lett., 97, 222110 2010)

61) Anisotropic charge transport in nonpolar GaN quantum wells: Polarization-induced line charge and interface roughness scattering

(A. Konar, T. Fang, N. Sun, and D. Jena

Phys. Rev. B, 82, 193301 2010)

57) Short-period AlN/GaN p-type superlattices: Hole transport usage in p-n Junctions

(J. Simon, H. Xing, and D. Jena,

Phys. Stat. Solidi (C), 7 (10), 2386 2010)

53) Polarization Induced Hole Doping in Wide Bandgap Uniaxial Semiconductor Heterostructures

(J. Simon, V. Protasenko, C. Lian, H. Xing & D. Jena

Science, 327, 60, 2010) Press: MIT Tech Review

2009

52) Polarization Induced Zener Tunnel Junctions in Wide Bandgap Heterostructures

(J. Simon, Z. Zhang, K. Goodman, H. Xing, T. Kosel, P. Fay & D. Jena

Phys. Rev. Lett., 103, 026801, 2009)

47) Heat Transport Mechanisms in Superlattices

(Y. K. Koh, Y. Cao, D. Cahill, & D. Jena

Adv. Funct. Materials, 19, 610, 2009)

2008

39) Effect of growth conditions on the conductivity of Mg doped p-type GaN by Molecular Beam Epitaxy

(J. Simon & D. Jena

Phys. Stat. Sol. A, 205 1074 2008)

2007

2006

20) Compositional modulation and optical emission in AlGaN epitaxial films

(M. Gao, S. Bradley, Y. Cao, D. Jena, Y. Lin, S. Ringel, H. Hwang, W. Schaff, & L. Brillson

J. Appl. Phys., 100, 103512, 2006)

16) Carrier transport and confinement in polarization-induced 3-D electron slabs: Importance of alloy scattering

(J. Simon, K. Wang, H. Xing, D. Jena & S. Rajan,

Appl. Phys. Lett., 88, 042109, 2006)

15) Electron mobility in graded AlGaN alloys

(S. Rajan, S. DenBaars, U. Mishra, H. Xing. & D. Jena,

Appl. Phys. Lett., 88, 042103, 2006)

2004

12) Dipole Scattering in highly polar semiconductor alloys

(W. Zhao and D. Jena,

J. Appl. Phys. 96, 2095, 2004)

As a graduate student @ UC Santa Barbara (Fall 1998 - Spring 2003)

2003

10) Magnetotransport properties of a polarization-doped three-dimensional electron slab

(D. Jena, S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher,

Phys. Rev. B 67 153306, 2003)

8) Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN

(D. Jena, S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher,

Phys. Stat. Sol. C, 0 2339, 2003)

2002

6) Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys

(D. Jena, S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, and I. P. Smorchkova,

Appl. Phys. Lett., 81 4395, 2002)

2001

2000

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