Journal Papers [Category: Theory and Modeling]

 

·            Get the preprints of papers posted on the arXivs. 

·            We have published in IEEE journals, IEDM/DRC, APL, Science, Nature journals, Physical Review journals, JAP, Nano Letters, etc. 

·            The complete list of papers below is sorted into categories here:

GaN materials and Devices

Deep-UV photonics

2D Crystals

Oxide Electronics

Sub-Boltzmann Switches

Theory and Modeling

 

Highlights of our contributions to the area of Theory and Modeling

 

      27) 2015: Proposal and evaluation of a very low-power transistor using atomically thin TMD semiconductor heterostructures (the THIN-TFET).

      26) 2015: Identified and evaluated carrier statistics and quantum capacitance effects in atomically thin gapped semiconductors.

      25) 2015: Introduced the idea of negative capacitance in active piezoelectric-gated FETs.

      24) 2015: Evaluation of the potential for polarization-enhanced GaN based Tunnel-FETs for low-power switching.

      23) 2014: Identified and evaluated scattering mechanisms and mobility limits in atomically thin semiconductors.

      22) 2014: Identified the intrinsic mobility limiting mechanisms in the prototype perovskite oxide SrTiO3.

      21) 2013: Identified and evaluated the advantages of TMD based low-power Tunneling FETs.

      20) 2013: First evaluation of Zener tunneling in TMD semiconductors.

      19) 2013: Proposal of the SymFET: a novel graphene tunneling transistor.  Experimentally verified.

      18) 2012: Identifed how Frenkel-Poole and Fowler Nordheim gate leakage is modified by polarization.

      17) 2012: Introduced a new phonon-ballistic scattering model for RF performance limits for GaN HEMTs.

      16) 2012: Prediction of strong room-temperature NDR in graphene-insulator-graphene tunnel junctions.  Experimentally verified.

      15) 2012: Identified differences in charge transport in polar, semi-polar, and non-polar GaN heterostructure devices.

      14) 2011: Introduced the concept of Stark-effect scattering in polar quantum well devices.

      13) 2011: Identified several new avenues for polarization-engineered ternary and quaternary nitride heterostructure devices.

      12) 2010: Study of the effect of remote phonon scattering from high-K dielectrics on mobility in layered materials.

      11) 2010: Identified polarization-enhanced remote-roughness scattering in GaN HEMTs.

      10) 2009: Uncovered the physics of polarization-induced Zener tunnel junctions in wide-bandgap heterostructures.

      9) 2008: First evaluation of Zener tunneling in GNRs, and the first proposal and evaluation of the GNR Tunneling-FET (GNR TFET).

      8) 2008: First evaluation of LER scattering and mobility in Graphene Nano Ribbons.

      7) 2008: Introduction of the concept of isotope engineering for boosting the speed of GaN HEMTs.

      6) 2007: First prediction of the strong effect of dielectric environment on transport in 2D crystal semiconductors.  Experimentally verified.

      5) 2007: Evaluated the carrier statistics and quantum capacitance in graphene/Dirac materials and nanoribbons.  Experimentally verified.

      4) 2004: Evaluation of the effect spin lifetimes due to dislocations in wide-bandgap semiconductors.

      3) 2000: Evaluation of the effect of scattering from strain fields of dislocations on 2DEG mobilities in GaN (and other!) HEMTs.

      2) 2000: Introduced a new dipole scattering mechanism in GaN (and other polar) heterostructures.

      1) 2000: Evaluation of the effect of charged dislocation scattering on 2DEG mobilities in GaN (and other!) HEMTs.

 

 

 

2016

 

      188) Deep-UV Emission from Ultra-Thin GaN/AlN Heterostructures

            (D. Bayerl et al.,

            Appl. Phys. Lett., accepted, to appear 2016)

      187) Intrinsic electron mobility limits in beta-Ga2O3

            (N. Ma et al.,

            Appl. Phys. Lett., 109, 212101 2016)

      186) Two-Dimensional Semiconductors for Transistors

            (M. Chhowalla, D. Jena, and H. Zhang,

            Nature Reviews, 1, 1-15 2016)

 

2015

 

      169) Transistor Switches using Active Piezoelectric Gate Barriers

            (R. Jana et al.,

            IEEE J. Expl. CDC, 1, 35 2015)

      168) Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

            (W. Li et al.,

            IEEE J. Expl. CDC, 1, 28 2015)

      163) 2-dimensional heterojunction interlayer tunneling FETs (Thin-TFETs)

            (M. Li et al.,

            IEEE J. Electron Devices Society, 3, 200 2015)

      161) Carrier statistics and quantum capacitance effects on mobility extraction in 2D crystal FETs

            (N. Ma and D. Jena,

            2D Materials, 2, 015003, 2015)

 

2014

 

      158) 2D Crystal Semiconductors: Intimate Contacts (News & Views)

            (D. Jena, K. Banerjee, H. Xing

            Nature Materials, 13, 1076 2014)

      157) Sub 60mV/decade Steep Transistors with Compliant Piezoelectric Gate Barriers

            (R. Jana et al.,

            IEDM Tech. Digest, 14, 347 2014)

      151) First-principles study of high-field related electronic behavior of group-III nitrides

            (Q. Yan, E. Kioupakis, D. Jena, C. van de Walle,

            Phys. Rev. B, 90, 121201(R), 2014)

      149) Optimum band gap and supply voltage in tunnel FETs

            (Q. Zhang et al.,

            IEEE Trans. Electron Dev., 61, 2719, 2014)

      148) Intrinsic Mobility Limiting Mechanisms in Strontium Titanate

            (A. Verma, A. Kadjos, T. Cain, S. Stemmer, and D. Jena,

            Phys. Rev. Lett., 112, 216601, 2014)

      147) Charge Scattering and Mobility in Atomically Thin Semiconductors

            (N. Ma and D. Jena,

            Phys. Rev. X, 4, 011043 2014)

      145) A Computational Study of Metal-Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

            (J. Kang, W. Liu, D. Sarkar, D. Jena, and K. Banerjee,

            Phys. Rev. X, 4, 031005, 2014)

      142) Two-dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells

            (Cheng-Ying Huang, J. Law, H. Lu, D. Jena, M. J. W. Rodwell, and A. C. Gossard,

            J. Appl. Phys. 115, 123711 2014)

      141) Single particle transport in two-dimensional heterojunction interlayer tunneling field-effect transistor (THIN-TFET)

            (M. Li et al.,

            J. Appl. Phys. 115, 074508 2014)

 

2013

 

      132) Novel Logic Devices based on 2D Crystal Semiconductors: Opportunities and Challenges

            (D. Jena et al.,

            IEDM Tech. Digest, 13, 487 2013)

      131) On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors

            (R. Jana et al.,

            Phys. Stat. Sol. (c), 10, 1469 2013)

      127) Tunneling Transistors based on Graphene and 2D Crystals

            (D. Jena,

            Proceedings of the IEEE, 101, 1585, 2013)

      126) Graphene reconfigurable THz optoelectronics

            (B. Sensale-Rodriguez, et al.,

            Proceedings of the IEEE, 101, 1705, 2013)

      125) Interband tunneling in 2D crystal semiconductors

            (N. Ma and D. Jena,

            Appl. Phys. Lett., 102, 132102, 2013)

      119) Power amplification at THz via plasma wave excitation in RTD-gated HEMTs

            (B. Sensale-Rodriguez, et al.,

            IEEE Trans. THz. Sci. Tech., 3, 200, 2013)

      117) SymFET: A proposed symmetric graphene tunneling field-effect transistor

            (P. Zhao et al.,

            IEEE Trans. Electron Dev., 60, 951, 2013)

      113) Terahertz imaging employing graphene modulator arrays

            (B. Sensale-Rodriguez, et al.,

            Opt. Exp., 21, 2324, 2013)

      112) Time-delay analysis in high-speed gate-recessed E-Mode InAlN HEMTs

            (B. Sensale-Rodriguez, et al.,

            Solid State Electron., 80, 67, 2013)

 

2012

 

      108) A Computational Study of Metal Contacts to Beyond-Graphene 2D Semiconductor Materials

            (J. Kang et al.,

            IEDM Tech. Digest, 12, 407 2012)

      106) Efficient THz electro-absorption modulation employing graphene plasmonic structures

            (B. Sensale-Rodriguez et al.,

            Appl. Phys. Lett., 101, 261115 2012)

      101) Extraordinary control of THz beam reflectance in Graphene electro-absorption modulators

            (B. Sensale-Rodriguez et al.,

            Nano Lett., 12, 4518, 2012)

      97) Enhanced THz detection in Resonant Tunnel Diode-Gated HEMTs

            (B. Sensale-Rodriguez et al.,

            ECS Trans., 49, 93, 2012)

      93) Effect of Optical Phonon Scattering on the Performance of GaN Transistors

            (T. Fang, R. Wang, H. Xing, S. Rajan, and D. Jena,

            IEEE Electron Device Lett., 33, 709, 2012)

      89) Graphene

            (D. Jena,

            Springer Encyclopedia (review article), accepted, to appear, 2012)

      88) Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions

            (R. Feenstra, D. Jena, and G. Gu

            J. Appl. Phys., 111, 043711, 2012)

      87) Charge transport in non-polar and semi-polar III-V nitride heterostructures

            (A. Konar, A. Verma, T. Fang, P. Zhao, R. Jana, and D. Jena,

            Semicond. Sci. Technol., 27, 024018, 2012)

 

2011

 

      85) FET THz detectors operating in the quantum capacitance limited region

            (B. Sensale-Rodriguez, L. Liu, R. Wang, D. Jena, and H. Xing,

            Int. Journal of High Speed Electronics and Systems, 20(3), 597, 2011)

      80) High-field transport in two-dimensional graphene

            (T. Fang, A. Konar, H. Xing, and D. Jena,

            Phys. Rev. B, 84, 125450, 2011)

      79) Unique prospects of graphene-based THz modulators

            (S. Sensale-Rodriguez, T. Fang, R. Yan, M. Kelly, D. Jena, L. Liu, and H. Xing,

            Appl. Phys. Lett., 99, 113104, 2011)

      77) Dielectric-environment mediated renormalization of many-body effects in a one-dimensional electron gas

            (A. Konar, T. Fang, and D. Jena,

            Phys. Rev. B, 84, 085422, 2011)

      74) Stark-Effect Scattering in Rough Quantum Wells

            (R. Jana, and D. Jena

            Appl. Phys. Lett., 99, 012104 2011)

      72) Influence of Metal-Graphene Contacts on the Operation and Scalability of Graphene Field-Effect Transistors

            (P. Zhao, Q. Zhang, D. Jena, and S. Koswatta,

            IEEE Trans. Electron Devices, 58(9), 3170 2011)

      68) Polarization Engineering in Group-III Nitride Heterostructures: New Opportunities for Device Design

            (D. Jena, J. Simon, K. Wang, Y. Cao, K. Goodman, J. Verma, S. Ganguly, G. Li, K. Karda, V. Protasenko, C. Lian, T. Kosel, P. Fay, and H. Xing

            Phys. Stat. Solidi.(a), 208, 1511 2011)

      64) Charged basal stacking fault scattering in nitride semiconductors

            (A. Konar, T. Fang, N. Sun, and D. Jena

            Appl. Phys. Lett., 98, 022109 2011)

 

2010

 

      62) Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors

            (Y. Cao, H. Xing, and D. Jena

            Appl. Phys. Lett., 97, 222116 2010)

      61) Anisotropic charge transport in nonpolar GaN quantum wells: Polarization-induced line charge and interface roughness scattering

            (A. Konar, T. Fang, N. Sun, and D. Jena

            Phys. Rev. B, 82, 193301 2010)

      59) Effect of high-K dielectrics on charge transport in graphene-based field-effect transistors

            (A. Konar, T. Fang, & D. Jena

            Phys. Rev. B, 82, 115452, 2010)

 

2009

 

      52) Polarization Induced Zener Tunnel Junctions in Wide Bandgap Heterostructures

            (J. Simon, Z. Zhang, K. Goodman, H. Xing, T. Kosel, P. Fay & D. Jena

            Phys. Rev. Lett., 103, 026801, 2009)

      51) Hydrodynamic instability of confined two-dimensional electron flow in semiconductors

            (W. R. C-Munoz, D. Jena, & M. Sen

            J. Appl. Phys., 106, 014506, 2009)

      48) A Theory for the High-Field Current Carrying Capacity of 1D Semiconductors

            (D. Jena

            J. Appl. Phys., 105, 123701, 2009)

 

2008

 

      46) Graphene Nanoribbon Tunnel Transistors

            (Q. Zhang, T. Fang, A. Seabaugh, H. Xing, & D. Jena

            IEEE Electron Device Lett., 29 (12), 1344, 2008)

      45) Mobility in Semiconducting Graphene Nanoribbons: Phonon, Impurity, and Edge Roughness Scattering

            (T. Fang, A. Konar, H. Xing, & D. Jena

            Phys. Rev. B, 78, 205403, 2008)

      43) Zener Tunneling in Semiconducting Nanotube and Graphene Nanoribbon p-n Junctions

            (D. Jena, T. Fang, Q. Zhang, & H. Xing

            Appl. Phys. Lett., 93, 112106, 2008)

      41) Isotope disorder of phonons in GaN and its beneficial effect in high power field effect transistors

            (J. Khurgin, D. Jena & Y. Ding

            Appl. Phys. Lett., 93, 032110, 2008)

 

2007

 

      31) Hot phonon effect on electron velocity saturation in GaN: A second look

            (J. Khurgin, Y. Ding, & D. Jena

            Appl. Phys. Lett., 91, 252104, 2007)

      30) Tailoring the carrier mobility in semiconductor nanowires by remote dielectrics

            (A. Konar & D. Jena

            J. Appl. Phys., 102, 123705, 2007)

      26) Carrier Statistics and Quantum Capacitance in Graphene Sheets and Ribbons

            (T. Fang, A. Konar, H. Xing & D. Jena

            Appl. Phys. Lett., 91, 092109, 2007)

      25) Hydrodynamic instability of one-dimensional electron flow in semiconductors

            (W. R. C-Munoz, M. Sen & D. Jena

            J. Appl. Phys., 102, 023703, 2007)

      21) Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering

            (D. Jena & A. Konar

            Phys. Rev. Lett., 98, 136805, 2007) [In the News – a) NanoTech, b) Also featured in the Virtual Journal of Nanoscale Science and Technology]

 

2006

 

2004

 

      13) Spin scattering by dislocations in III-V Semiconductors

            (D. Jena,

            Phys. Rev. B 70, 245203, 2004) [Also featured in the Virtual Journal of Nanoscience and Technology, Dec 2004 issue.]

      12) Dipole Scattering in highly polar semiconductor alloys

(W. Zhao and D. Jena,

J. Appl. Phys. 96, 2095, 2004)

 

As a graduate student @ UC Santa Barbara (Fall 1998 - Spring 2003)

 

2003

 

2002

 

7)   Quantum and classical scattering times due to charged dislocations in an impure electron gas

(D. Jena and U. K. Mishra,

Phys. Rev. B 66 241307, 2002)

4)   Effect of scattering by strain fields surrounding edge dislocations on electron transport in 2DEGs

(D. Jena and U. K. Mishra,

Appl. Phys. Lett., 80 64, 2002)

 

2001

 

3)   Electron transport in III-V nitride 2DEGs

(D. Jena, I. Smorchkova, A. Gossard, U. K. Mishra,

Phys. Stat. Sol. B, 228 617, 2001)

 

2000

 

2)   Dipole scattering in polarization induced two-dimensional electron gases

(D. Jena, A. C. Gossard, U. K. Mishra,

J. Appl. Phys., 88 4734, 2000)

1)   Dislocation scattering in a two-dimensional electron gas 

(D. Jena, A. C. Gossard, U. K. Mishra,

Appl. Phys. Lett., 76 1707, 2000)

 

Home