Journal Papers
[Category: Theory and Modeling]
·
Get
the preprints
of papers posted on the arXivs.
·
We
have published in IEEE journals, IEDM/DRC, APL, Science, Nature journals,
Physical Review journals, JAP, Nano Letters, etc.
·
The
complete list of papers below is sorted into categories here:
Highlights of our contributions
to the area of Theory and Modeling
27) 2015: Proposal and evaluation of a
very low-power transistor using atomically thin TMD semiconductor heterostructures (the THIN-TFET).
26) 2015: Identified and evaluated carrier
statistics and quantum capacitance effects in atomically thin gapped
semiconductors.
25) 2015: Introduced the idea of negative
capacitance in active piezoelectric-gated FETs.
24) 2015: Evaluation of the potential for
polarization-enhanced
GaN based Tunnel-FETs for low-power switching.
23) 2014: Identified and evaluated
scattering mechanisms and mobility
limits in atomically thin semiconductors.
22) 2014: Identified the intrinsic
mobility limiting mechanisms in the prototype perovskite
oxide SrTiO3.
21) 2013: Identified and evaluated the advantages
of TMD based low-power Tunneling FETs.
20) 2013: First evaluation of Zener tunneling in TMD semiconductors.
19) 2013: Proposal of the SymFET: a novel graphene
tunneling transistor. Experimentally
verified.
18) 2012: Identifed
how Frenkel-Poole and Fowler Nordheim
gate leakage is modified by polarization.
17) 2012: Introduced a new phonon-ballistic
scattering model for RF performance limits for GaN
HEMTs.
16) 2012: Prediction of strong
room-temperature NDR in graphene-insulator-graphene tunnel junctions.
Experimentally verified.
15) 2012: Identified differences in charge
transport in polar, semi-polar, and non-polar GaN
heterostructure devices.
14) 2011: Introduced the concept of Stark-effect
scattering in polar quantum well devices.
13) 2011: Identified several new avenues
for polarization-engineered
ternary and quaternary nitride heterostructure
devices.
12) 2010: Study of the effect of remote
phonon scattering from high-K dielectrics on mobility in layered materials.
11) 2010: Identified polarization-enhanced
remote-roughness scattering in GaN HEMTs.
10) 2009: Uncovered the physics of polarization-induced
Zener tunnel junctions in wide-bandgap heterostructures.
9) 2008: First evaluation
of Zener tunneling in GNRs, and the first proposal
and evaluation
of the GNR Tunneling-FET (GNR TFET).
8) 2008: First evaluation of LER
scattering and mobility
in Graphene Nano Ribbons.
7) 2008: Introduction of the concept of isotope
engineering for boosting the speed of GaN HEMTs.
6) 2007: First prediction
of the strong effect of dielectric environment on transport in 2D crystal
semiconductors. Experimentally verified.
5) 2007: Evaluated
the carrier statistics and quantum capacitance in graphene/Dirac
materials and nanoribbons. Experimentally verified.
4)
2004: Evaluation of the effect spin
lifetimes due to dislocations in wide-bandgap
semiconductors.
3) 2000: Evaluation of the effect of scattering
from strain fields of dislocations on 2DEG mobilities
in GaN (and other!) HEMTs.
2) 2000: Introduced a new dipole
scattering mechanism in GaN (and other polar) heterostructures.
1) 2000: Evaluation of the effect of charged
dislocation scattering on 2DEG mobilities in GaN (and other!) HEMTs.
2016
188) Deep-UV Emission from Ultra-Thin GaN/AlN Heterostructures
(D. Bayerl
et al.,
Appl. Phys. Lett., accepted, to
appear 2016)
187) Intrinsic electron mobility limits in beta-Ga2O3
(N. Ma et al.,
Appl. Phys. Lett.,
109, 212101 2016)
186) Two-Dimensional
Semiconductors for Transistors
(M. Chhowalla,
D. Jena, and H. Zhang,
Nature Reviews, 1, 1-15 2016)
2015
169) Transistor
Switches using Active Piezoelectric Gate Barriers
(R. Jana et al.,
IEEE
J. Expl. CDC, 1, 35 2015)
168) Polarization-Engineered
III-Nitride Heterojunction Tunnel Field-Effect
Transistors
(W. Li et al.,
IEEE
J. Expl. CDC, 1, 28 2015)
163) 2-dimensional
heterojunction interlayer tunneling FETs (Thin-TFETs)
(M. Li et al.,
IEEE J.
Electron Devices Society, 3, 200
2015)
161) Carrier
statistics and quantum capacitance effects on mobility extraction in 2D crystal
FETs
(N. Ma and D. Jena,
2D Materials,
2, 015003, 2015)
2014
158) 2D
Crystal Semiconductors: Intimate Contacts (News & Views)
(D. Jena, K. Banerjee, H. Xing
Nature
Materials, 13, 1076 2014)
157) Sub
60mV/decade Steep Transistors with Compliant Piezoelectric Gate Barriers
(R. Jana et al.,
IEDM Tech. Digest, 14, 347 2014)
151) First-principles
study of high-field related electronic behavior of group-III nitrides
(Q. Yan, E. Kioupakis, D. Jena, C.
van de Walle,
Phys. Rev. B, 90, 121201(R), 2014)
149) Optimum
band gap and supply voltage in tunnel FETs
(Q. Zhang et al.,
IEEE
Trans. Electron Dev., 61, 2719,
2014)
148) Intrinsic
Mobility Limiting Mechanisms in Strontium Titanate
(A. Verma, A. Kadjos, T. Cain, S.
Stemmer, and D. Jena,
Phys. Rev. Lett., 112,
216601, 2014)
147) Charge
Scattering and Mobility in Atomically Thin Semiconductors
(N. Ma and D. Jena,
Phys.
Rev. X, 4, 011043 2014)
145) A
Computational Study of Metal-Contacts to Monolayer Transition-Metal
Dichalcogenide Semiconductors
(J. Kang, W. Liu, D. Sarkar, D.
Jena, and K. Banerjee,
Phys.
Rev. X, 4, 031005, 2014)
(Cheng-Ying Huang, J. Law, H. Lu, D.
Jena, M. J. W. Rodwell, and A. C. Gossard,
J. Appl. Phys. 115, 123711 2014)
(M. Li et al.,
J. Appl. Phys. 115, 074508 2014)
2013
132) Novel
Logic Devices based on 2D Crystal Semiconductors: Opportunities and Challenges
(D. Jena et al.,
IEDM Tech. Digest, 13, 487 2013)
(R. Jana et al.,
Phys.
Stat. Sol. (c), 10, 1469 2013)
127) Tunneling
Transistors based on Graphene and 2D Crystals
(D. Jena,
Proceedings
of the IEEE, 101, 1585, 2013)
126) Graphene reconfigurable THz optoelectronics
(B. Sensale-Rodriguez, et al.,
Proceedings
of the IEEE, 101, 1705, 2013)
125) Interband tunneling in 2D crystal semiconductors
(N. Ma and D. Jena,
Appl. Phys. Lett.,
102, 132102, 2013)
119) Power
amplification at THz via plasma wave excitation in RTD-gated HEMTs
(B. Sensale-Rodriguez, et al.,
IEEE
Trans. THz. Sci. Tech., 3, 200,
2013)
117) SymFET: A proposed symmetric graphene tunneling
field-effect transistor
(P. Zhao et al.,
IEEE
Trans. Electron Dev., 60, 951,
2013)
113) Terahertz
imaging employing graphene modulator arrays
(B. Sensale-Rodriguez, et al.,
Opt. Exp.,
21, 2324, 2013)
112) Time-delay
analysis in high-speed gate-recessed E-Mode InAlN HEMTs
(B. Sensale-Rodriguez, et al.,
Solid
State Electron., 80, 67, 2013)
2012
108) A
Computational Study of Metal Contacts to Beyond-Graphene
2D Semiconductor Materials
(J. Kang et al.,
IEDM Tech. Digest, 12, 407 2012)
106) Efficient
THz electro-absorption modulation employing graphene plasmonic structures
(B. Sensale-Rodriguez et al.,
Appl. Phys. Lett.,
101, 261115 2012)
101) Extraordinary control of THz beam reflectance in Graphene
electro-absorption modulators
(B. Sensale-Rodriguez et al.,
Nano Lett.,
12, 4518, 2012)
97) Enhanced
THz detection in Resonant Tunnel Diode-Gated HEMTs
(B. Sensale-Rodriguez et al.,
ECS Trans., 49, 93, 2012)
93) Effect
of Optical Phonon Scattering on the Performance of GaN Transistors
(T. Fang, R. Wang, H. Xing, S.
Rajan, and D. Jena,
IEEE
Electron Device Lett., 33, 709, 2012)
89) Graphene
(D. Jena,
Springer Encyclopedia (review
article), accepted, to appear, 2012)
88) Single-Particle
Tunneling in Doped Graphene-Insulator-Graphene Junctions
(R. Feenstra, D. Jena, and G. Gu
J. Appl. Phys., 111, 043711, 2012)
87) Charge
transport in non-polar and semi-polar III-V nitride heterostructures
(A. Konar, A. Verma, T. Fang, P.
Zhao, R. Jana, and D. Jena,
Semicond.
Sci. Technol., 27, 024018, 2012)
2011
85) FET
THz detectors operating in the quantum capacitance limited region
(B. Sensale-Rodriguez, L. Liu, R.
Wang, D. Jena, and H. Xing,
Int.
Journal of High Speed Electronics and Systems, 20(3), 597, 2011)
80) High-field
transport in two-dimensional graphene
(T. Fang, A. Konar, H. Xing, and D. Jena,
Phys. Rev. B, 84, 125450, 2011)
79) Unique
prospects of graphene-based THz modulators
(S. Sensale-Rodriguez, T. Fang, R.
Yan, M. Kelly, D. Jena, L. Liu, and
H. Xing,
Appl. Phys. Lett.,
99, 113104, 2011)
(A. Konar, T. Fang, and D. Jena,
Phys. Rev. B, 84, 085422, 2011)
74) Stark-Effect
Scattering in Rough Quantum Wells
(R. Jana, and D. Jena
Appl. Phys. Lett.,
99, 012104 2011)
(P. Zhao, Q. Zhang, D. Jena, and S. Koswatta,
IEEE
Trans. Electron Devices, 58(9),
3170 2011)
68) Polarization
Engineering in Group-III Nitride Heterostructures: New Opportunities for Device
Design
(D. Jena, J. Simon, K. Wang, Y. Cao, K. Goodman, J. Verma, S.
Ganguly, G. Li, K. Karda, V. Protasenko, C. Lian, T. Kosel, P. Fay, and H. Xing
Phys. Stat. Solidi.(a), 208,
1511 2011)
64) Charged
basal stacking fault scattering in nitride semiconductors
(A. Konar, T. Fang, N. Sun, and D. Jena
Appl. Phys. Lett.,
98, 022109 2011)
2010
(Y. Cao, H. Xing, and D. Jena
Appl. Phys. Lett.,
97, 222116 2010)
(A. Konar, T. Fang, N. Sun, and D. Jena
Phys. Rev. B, 82, 193301 2010)
59) Effect
of high-K dielectrics on charge transport in graphene-based field-effect
transistors
(A. Konar, T. Fang, & D.
Phys. Rev. B, 82, 115452, 2010)
2009
52) Polarization
Induced Zener Tunnel Junctions in Wide Bandgap Heterostructures
(J. Simon, Z. Zhang, K. Goodman, H.
Xing, T. Kosel, P. Fay & D.
Phys. Rev. Lett., 103,
026801, 2009)
51) Hydrodynamic
instability of confined two-dimensional electron flow in semiconductors
(W. R. C-Munoz, D. Jena, & M. Sen
J. Appl. Phys., 106, 014506, 2009)
48) A
Theory for the High-Field Current Carrying Capacity of 1D Semiconductors
(D.
J. Appl. Phys., 105, 123701, 2009)
2008
46) Graphene Nanoribbon Tunnel Transistors
(Q. Zhang, T. Fang, A. Seabaugh, H.
Xing, & D.
IEEE
Electron Device Lett., 29 (12), 1344, 2008)
45) Mobility
in Semiconducting Graphene Nanoribbons: Phonon, Impurity, and Edge Roughness
Scattering
(T. Fang, A. Konar, H. Xing, & D.
Phys.
Rev. B, 78, 205403, 2008)
43) Zener Tunneling in Semiconducting Nanotube and Graphene
Nanoribbon p-n Junctions
(D.
Appl. Phys. Lett.,
93, 112106, 2008)
41) Isotope
disorder of phonons in GaN and its beneficial effect in high power field effect
transistors
(J. Khurgin, D.
Appl. Phys. Lett.,
93, 032110, 2008)
2007
31) Hot
phonon effect on electron velocity saturation in GaN: A second look
(J. Khurgin, Y. Ding, & D.
Appl. Phys. Lett.,
91, 252104, 2007)
30) Tailoring
the carrier mobility in semiconductor nanowires by remote dielectrics
(A. Konar & D.
J. Appl. Phys., 102, 123705, 2007)
26) Carrier
Statistics and Quantum Capacitance in Graphene Sheets and Ribbons
(T. Fang, A. Konar, H. Xing & D.
Appl. Phys. Lett.,
91, 092109, 2007)
25) Hydrodynamic
instability of one-dimensional electron flow in semiconductors
(W. R. C-Munoz, M. Sen & D.
J. Appl. Phys., 102, 023703, 2007)
21) Enhancement
of carrier mobility in semiconductor nanostructures by dielectric engineering
(D.
Phys. Rev. Lett., 98,
136805, 2007) [In the News – a) NanoTech,
b) Also featured in the Virtual
Journal of Nanoscale Science and Technology]
2006
2004
13) Spin
scattering by dislocations in III-V Semiconductors
(D.
Phys. Rev. B 70, 245203, 2004) [Also featured
in the Virtual Journal of Nanoscience and Technology, Dec
2004 issue.]
12) Dipole
Scattering in highly polar semiconductor alloys
(W. Zhao and D.
J. Appl. Phys.
96, 2095, 2004)
As a
graduate student @ UC Santa Barbara (Fall
1998 - Spring 2003)
2003
2002
7) Quantum
and classical scattering times due to charged dislocations in an impure
electron gas
(D.
Phys. Rev. B 66
241307, 2002)
4) Effect
of scattering by strain fields surrounding edge dislocations on electron
transport in 2DEGs
(D.
Appl. Phys. Lett.,
80 64, 2002)
2001
3) Electron
transport in III-V nitride 2DEGs
(D.
Phys.
Stat. Sol. B, 228 617, 2001)
2000
2) Dipole
scattering in polarization induced two-dimensional electron gases
(D.
J. Appl. Phys., 88 4734,
2000)
1) Dislocation
scattering in a two-dimensional electron gas
(D.
Appl. Phys. Lett.,
76 1707, 2000)