Journal Papers [Category: Sub-Boltzmann (Steep) Switches]

· Get the preprints of papers posted on the arXivs.

· We have published in IEEE journals, IEDM/DRC, APL, Science, Nature journals, Physical Review journals, JAP, Nano Letters, etc.

· The complete list of papers below is sorted into categories here:

GaN materials and Devices

Deep-UV photonics

2D Crystals

Oxide Electronics

Sub-Boltzmann Switches

Theory and Modeling

Highlights of our contributions to the area of Sub-Boltzmann (Steep) Switches

11) 2015: Demonstration of a broken gap Esaki-diode with NDR in a mismatched 2D crystal heterostructure.

10) 2015: Proposal and evaluation of a very low-power transistor using atomically thin TMD semiconductor heterostructures (the THIN-TFET).

9) 2015: Introduced the idea of negative capacitance in active piezoelectric-gated FETs.

8) 2015: Evaluation of the potential for polarization-enhanced GaN based Tunnel-FETs for low-power switching.

7) 2013: Identified and evaluated the advantages of TMD based low-power Tunneling FETs.

6) 2013: First evaluation of Zener tunneling in TMD semiconductors.

5) 2013: Proposal of the SymFET: a novel graphene tunneling transistor. Experimentally verified.

4) 2012: Prediction of strong room-temperature NDR in graphene-insulator-graphene tunnel junctions. Experimentally verified.

3) 2009: Uncovered the physics of polarization-induced Zener tunnel junctions in wide-bandgap GaN-based heterostructures.

2) 2008: First evaluation of Zener tunneling in GNRs, and the first proposal and evaluation of the GNR Tunneling-FET (GNR TFET).

1) 2007: Evaluated the carrier statistics and quantum capacitance in graphene/Dirac materials and nanoribbons. Experimentally verified.

2016

186) Two-Dimensional Semiconductors for Transistors

(M. Chhowalla, D. Jena, and H. Zhang,

Nature Reviews, 1, 1-15 2016)

2015

174) Ferroelectric transition in compressively strained SrTiO₃ thin films

(A. Verma et al.,

Appl. Phys. Lett., 107, 192908 2015)

173) Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

(X. Yan et al.,

Appl. Phys. Lett., 107, 163504 2015)

172) Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment

(R. Yan et al.,

Nano Letters, 15, 5791 2015)

171) Determination of the Mott-Hubbard gap in GdTiO₃

(L. Bjaalie et al.,

Physical Review B, 92, 085111 2015)

169) Transistor Switches using Active Piezoelectric Gate Barriers

(R. Jana et al.,

IEEE J. Expl. CDC, 1, 35 2015)

168) Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

(W. Li et al.,

IEEE J. Expl. CDC, 1, 28 2015)

163) 2-dimensional heterojunction interlayer tunneling FETs (Thin-TFETs)

(M. Li et al.,

IEEE J. Electron Devices Society, 3, 200 2015)

161) Carrier statistics and quantum capacitance effects on mobility extraction in 2D crystal FETs

(N. Ma and D. Jena,

2D Materials, 2, 015003, 2015)

159) Graphene nanoribbon FETs on wafer-scale epitaxial graphene on SiC substrates

(W. Hwang et al,

APL Materials, 3, 011101, 2015)

2014

157) Sub 60mV/decade Steep Transistors with Compliant Piezoelectric Gate Barriers

(R. Jana et al.,

IEDM Tech. Digest, 14, 347 2014)

149) Optimum band gap and supply voltage in tunnel FETs

(Q. Zhang et al.,

IEEE Trans. Electron Dev., 61, 2719, 2014)

141) Single particle transport in two-dimensional heterojunction interlayer tunneling field-effect transistor (THIN-TFET)

(M. Li et al.,

J. Appl. Phys. 115, 074508 2014)

139) Tunnel-Injection Quantum Dot deep-UV LEDs with Polarization-Induced Doping in III-Nitride Heterostructures

(J. Verma et al.,

Appl. Phys. Lett., 104, 021105 2014)

135) Electronic transport properties of top-gated epitaxial graphene nanoribbon field-effect transistors on SiC wafers

(Wan Sik Hwang et al.,

J. Vac. Sci. Technol (b), 32, 012202 2014)

2013

132) Novel Logic Devices based on 2D Crystal Semiconductors: Opportunities and Challenges

(D. Jena et al.,

IEDM Tech. Digest, 13, 487 2013)

131) On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors

(R. Jana et al.,

Phys. Stat. Sol. (c), 10, 1469 2013)

127) Tunneling Transistors based on Graphene and 2D Crystals

(D. Jena,

Proceedings of the IEEE, 101, 1585, 2013)

125) Interband tunneling in 2D crystal semiconductors

(N. Ma and D. Jena,

Appl. Phys. Lett., 102, 132102, 2013)

119) Power amplification at THz via plasma wave excitation in RTD-gated HEMTs

(B. Sensale-Rodriguez, et al.,

IEEE Trans. THz. Sci. Tech., 3, 200, 2013)

117) SymFET: A proposed symmetric graphene tunneling field-effect transistor

(P. Zhao et al.,

IEEE Trans. Electron Dev., 60, 951, 2013)

114) Tunnel-injection GaN quantum-dot ultraviolet light-emitting diodes

(J. Verma et al.,

Appl. Phys. Lett., 101, 032109 2013)

2012

105) Graphene nanoribbon FETs for digital electronics: experiment and modeling

(K. Tahy et al.,

Int. J. of Circuit Theory, 41, 603, 2012)

97) Enhanced THz detection in Resonant Tunnel Diode-Gated HEMTs

(B. Sensale-Rodriguez et al.,

ECS Trans., 49, 93, 2012)

96) Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

(W.-S. Hwang, K. Tahy, X. Li, H. Xing, A. Seabaugh, C. Y. Sung, and D. Jena,

Appl. Phys. Lett., 100, 203107, 2012)

90) Fabrication of Top-Gated Epitaxial Graphene Nano-Ribbon FETs using Hydrogen-silsesquioxane (HSQ)

(W.-S. Hwang, K. Tahy, L. Nyakiti, V. Wheeler, R. Myers-Ward, C. Eddy, D. K. Gaskill, H. Xing, A. Seabaugh, and D. Jena,

J. Vac. Sci. Tech. (B), 30(3), 03D14, 2012)

89) Graphene

(D. Jena,

Springer Encyclopedia (review article), accepted, to appear, 2012)

88) Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions

(R. Feenstra, D. Jena, and G. Gu

J. Appl. Phys., 111, 043711, 2012)

87) Charge transport in non-polar and semi-polar III-V nitride heterostructures

(A. Konar, A. Verma, T. Fang, P. Zhao, R. Jana, and D. Jena,

Semicond. Sci. Technol., 27, 024018, 2012)

2011

68) Polarization Engineering in Group-III Nitride Heterostructures: New Opportunities for Device Design

(D. Jena, J. Simon, K. Wang, Y. Cao, K. Goodman, J. Verma, S. Ganguly, G. Li, K. Karda, V. Protasenko, C. Lian, T. Kosel, P. Fay, and H. Xing

Phys. Stat. Solidi.(a), 208, 1511 2011)

2010

55) Quantum Transport in Graphene Nanoribbons patterned by Metal Masks

(C. Lian, K. Tahy, T. Fang, G. Li, H. Xing, and D. Jena

Appl. Phys. Lett., 96, 101309, 2010)

2009

52) Polarization Induced Zener Tunnel Junctions in Wide Bandgap Heterostructures

(J. Simon, Z. Zhang, K. Goodman, H. Xing, T. Kosel, P. Fay & D. Jena

Phys. Rev. Lett., 103, 026801, 2009)

2008

46) Graphene Nanoribbon Tunnel Transistors

(Q. Zhang, T. Fang, A. Seabaugh, H. Xing, & D. Jena

IEEE Electron Device Lett., 29 (12), 1344, 2008)

43) Zener Tunneling in Semiconducting Nanotube and Graphene Nanoribbon p-n Junctions

(D. Jena, T. Fang, Q. Zhang, & H. Xing

Appl. Phys. Lett., 93, 112106, 2008)

2007

26) Carrier Statistics and Quantum Capacitance in Graphene Sheets and Ribbons

(T. Fang, A. Konar, H. Xing & D. Jena

Appl. Phys. Lett., 91, 092109, 2007)

2006

2004

As a graduate student @ UC Santa Barbara (Fall 1998 - Spring 2003)

2003

2002

2001

2000

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