Books
[Category: Gallium Nitride Materials Physics and Devices]
Polarization Effects in
Semiconductors: From Ab-Initio Theory to Device Applications
Springer,
Dec 2007, edited by Colin Wood and Debdeep Jena. (Available from Amazon).
Journal Papers
[Category: Gallium Nitride Materials Physics and Devices]
·
Get
the preprints
of papers posted on the arXivs.
·
We
have published in IEEE journals, IEDM/DRC, APL, Science, Nature journals,
Physical Review journals, JAP, Nano Letters, etc.
·
The
complete list of papers below is sorted into categories here:
Highlights of our contributions
to the area of Gallium Nitride Materials Physics and Devices
38) 2016: Demonstration of sub
230 nm emission from GaN quantized heterostructures for deep-UV LEDs by MBE.
37) 2016: Demonstration of avalanche
capability in GaN pn diodes.
36) 2015: Demonstration of very low
leakage MBE-grown homoepitaxial GaN pn diodes on bulk substrates.
35) 2015: Introduced the idea of negative
capacitance in active piezoelectric-gated FETs.
34) 2015: Evaluation of the potential for
polarization-enhanced
GaN based Tunnel-FETs for low-power switching.
33) 2014: Demonstration of a novel GaN
heterostructure barrier diode with polarization-induced delta-doping.
32) 2014: New polarization-induced SOI-like
double-heterostructure AlN/GaN/AlN QW HEMT physics on an AlN platform.
31) 2014: First demonstration of a
tunnel-injection deep-UV quantum-dot LED with polarization-induced
p-type doping.
30) 2014: Demonstration of all-MBE
RF GaN HEMTs on Silicon with regrown
ohmic contacts.
29) 2013: Discovery of ultrahigh
density 2D hole gases in GaN-on-AlN heterostructures, demonstration of E/D
mode p-channel HFETs.
28)
2013: Demonstration of a 400GHz
fT GaN HEMT with
regrown contacts.
27) 2013: First demonstration of a tunnel-injection
deep-UV quantum-dot LED.
26) 2012: Identifed how Frenkel-Poole
and Fowler Nordheim gate leakage is modified by polarization.
25) 2012: Introduced a new phonon-ballistic
scattering model for RF performance limits for GaN HEMTs.
24) 2012: First demonstration of a pseudomorphic
ultra-thin body strained GaN QW HEMT on AlN with regrown contacts.
23) 2012: Ultralow resistance MBE
n+ GaN contacts and MBE regrown
ohmic contacts for high-speed metal-polar GaN HEMTs.
22) 2012: Identified differences in charge
transport in polar, semi-polar, and non-polar GaN heterostructure devices.
21) 2011: Demonstration of GaN
nanowire growth on ALD surfaces by MBE.
20) 2011: First demonstration of a N-polar
quantum-well LED with polarization-induced p-type hole injector.
19) 2011: Introduced the concept of Stark-effect
scattering in polar quantum well devices.
18) 2011: Identified role of polarization
charges at ALD/Nitride heterointerfaces on GaN HEMT physics.
17) 2011: Identified several new avenues
for polarization-engineered
ternary and quaternary nitride heterostructure devices.
16) 2010: First demonstration of polarization-induced
p-type doping in wide-bandgap semiconductors.
15) 2010: Identified polarization-enhanced
remote-roughness scattering in GaN HEMTs.
14) 2010: Demonstrated work-function
engineering for threshold voltage control of GaN HEMTs.
13) 2009: Uncovered the physics of polarization-induced
Zener tunnel junctions in wide-bandgap heterostructures.
12) 2009: Evaluation of thermal
conductivity of AlN/GaN superlattices.
11) 2008: Demonstration of a MBE high-performance
AlN/GaN HEMT as an enabler of ultrafast RF nitride electronics.
10) 2008: Introduction of the concept of isotope
engineering for boosting the speed of GaN HEMTs.
9) 2008: Demonstrated the lowest
sheet resistance 2DEGs and quantum oscillations in AlN/GaN heterojunctions.
8) 2007: Identified a high
mobility window in AlN/GaN 2DEGs that enabled scaling for high-speed
nitride HEMTs.
7) 2006: Determination of intrinsic
and defect-related mobility limits in InN.
6) 2004: Evaluation of the effect spin
lifetimes due to dislocations in wide-bandgap semiconductors.
5) 2003: First observation of Shubnikov
de-Haas oscillations in a polarization-induced
3-dimensional electron gas in graded Al(Ga)N.
4) 2002: First demonstration of polarization-induced
n-type doping in wide-bandgap semiconductors.
3) 2000: Evaluation of the effect of scattering
from strain fields of dislocations on 2DEG mobilities in GaN (and other!)
HEMTs.
2) 2000: Introduced a new dipole
scattering mechanism in GaN (and other polar) heterostructures.
1) 2000: Evaluation of the effect of charged
dislocation scattering on 2DEG mobilities in GaN (and other!) HEMTs.
2016
188) Deep-UV Emission from Ultra-Thin
GaN/AlN Heterostructures
(D. Bayerl et al.,
Appl. Phys. Lett.,
accepted, to appear 2016)
(S. M. Islam et al.,
Jap. J. Appl. Phys., 55, 05FF06 2016)
180) High-quality
InN films on GaN using graded InGaN buffers by MBE
(S. M. Islam et al.,
Jap. J. Appl. Phys., 55, 05FD12 2016)
178) 1.7
kV and 0.55 mOhm.cm2 GaN p-n diodes on Bulk GaN substrates with
Avalanche Capability
(K. Nomoto et al.,
IEEE EDL, 37, 161 2016)
177) Ultralow-Leakage
AlGaN/GaN HEMTs on Si with Non-Alloyed Regrown Ohmic Contacts
(B. Song et al.,
IEEE EDL, 37, 16 2016)
2015
(Z. Hu et al.,
Appl. Phys. Lett., 92, 085111 2015)
175) High
breakdown single-crystal GaN p-n diodes by molecular beam epitaxy
(M. Qi et al.,
Appl. Phys. Lett., 107, 232101 2015)
173) Polarization-induced
Zener tunnel diodes in GaN/InGaN/GaN heterojunctions
(X. Yan et al.,
Appl. Phys. Lett., 107, 163504 2015)
170) Localized
surface phonon polariton resonances in polar gallium nitride
(K. Feng et al.,
Applied Physics Letters, 107, 081108 2015)
169) Transistor
Switches using Active Piezoelectric Gate Barriers
(R. Jana et al.,
IEEE
J. Expl. CDC, 1, 35 2015)
168) Polarization-Engineered
III-Nitride Heterojunction Tunnel Field-Effect Transistors
(W. Li et al.,
IEEE
J. Expl. CDC, 1, 28 2015)
166) Low-temperature
AlN growth by MBE and its application in HEMTs
(F. Faria et al.,
J. Crystal Growth, 425, 133 2015)
164) 1.9
kV AlGaN/GaN lateral Schottky barrier diodes on Silicon
(M. Zhu et al.,
IEEE
Electron Dev. Lett., 36, 375
2015)
(M. Qi et al.,
Appl. Phys. Lett., 106, 041906 2015)
2014
158) 2D
Crystal Semiconductors: Intimate Contacts (News & Views)
(D. Jena, K. Banerjee, H. Xing
Nature
Materials, 13, 1076 2014)
157) Sub
60mV/decade Steep Transistors with Compliant Piezoelectric Gate Barriers
(R. Jana et al.,
IEDM Tech. Digest, 14, 347 2014)
154) Strain
sensitivity in the nitrogen 1s NEXAFS spectra of gallium nitride
(A. Ritchie et al.,
Appl.
Surf. Sci., 316, 232, 2014)
153) Faceted sidewall etching of n-GaN on sapphire by
photoelectrochemical wet processing
(Y. Yue, X. Yan, W. Li, H. G. Xing,
D. Jena, and P .Fay,
J. Vac. Sci. Tech. B, 32, 061201, 2014)
151) First-principles
study of high-field related electronic behavior of group-III nitrides
(Q. Yan, E. Kioupakis, D. Jena, C.
van de Walle,
Phys. Rev. B, 90, 121201(R), 2014)
(S. Ganguly, J. Verma, H. G. Xing,
and D. Jena,
Appl. Phys. Exp, 7, 105501, 2014)
144) GaN
Heterostructure Barrier Diodes (HBD) exploiting Polarization-induced
Delta-doping
(P. Zhao et al.,
IEEE
Electron Dev. Lett., 35, 615,
2014)
(G. Li et al.,
Appl. Phys. Lett. 104, 193506, 2014)
(Cheng-Ying Huang, J. Law, H. Lu, D.
Jena, M. J. W. Rodwell, and A. C. Gossard,
J. Appl. Phys. 115, 123711 2014)
140) Impact
of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN
MOSHEMTs
(Z. Hu et al.,
Appl. Phys. Exp, 7, 031002 2014)
(J. Verma et al.,
Appl. Phys. Lett., 104, 021105 2014)
138) AlGaN/GaN
HEMTs on Silicon by MBE with regrown contacts and fT=153 GHz
(S. Ganguly et al.,
Phys.
Stat. Sol. (c), 11, 887, 2014)
137) Performance
enhancement of InAlN/GaN HEMTs by KOH surface treatment
(S. Ganguly et al.,
Appl. Phys. Exp, 7, 034102 2014)
136) Effect
of Fringing Capacitances on the RF Performance of GaN HEMTs with T-Gates
(B. Song et al.,
IEEE
Trans. Electron Devices, 61,
747, 2014)
2013
134) Dispersion-
free operation in InAlN-based HEMTs with ultrathin or no passivation
(R. Wang et al.,
IEDM Tech. Digest, 13, 703 2013)
(R. Jana et al.,
Phys.
Stat. Sol. (c), 10, 1469 2013)
130) Photoluminescence-Based
Electron and Lattice Temperature Measurements in GaN-Based HEMTs
(J. A. Ferrer-Perez et al.,
J.
Electronic Materials, Nov 2013)
129) Polarization-Induced
GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs
(G. Li et al.,
IEEE
Electron Dev. Lett., 34, 852,
2013)
123) Ultrascaled
InAlN/GaN HEMTs with fT of 400 GHz
(Y. Yue, et al.,
Jpn. J. Appl. Phys, 52, 08JN14, 2013)
119) Power
amplification at THz via plasma wave excitation in RTD-gated HEMTs
(B. Sensale-Rodriguez, et al.,
IEEE
Trans. THz. Sci. Tech., 3, 200,
2013)
118) InGaN
channel high electron mobility transistors with InAlGaN barrier and ft/fmax or
260/220 GHz
(R. Wang, et al.,
Appl. Phys. Express,
6, 016503, 2013)
115) Quaternary
barrier InAlGaN HEMTs with ft/fmax of 230/300 GHz
(R. Wang et al.,
IEEE
Electron Dev. Lett., 34, 378
2013)
114) Tunnel-injection
GaN quantum-dot ultraviolet light-emitting diodes
(J. Verma et al.,
Appl. Phys. Lett., 101, 032109 2013)
112) Time-delay
analysis in high-speed gate-recessed E-Mode InAlN HEMTs
(B. Sensale-Rodriguez, et al.,
Solid
State Electron., 80, 67, 2013)
2012
107) Polarization
effects on gate leakage in InAlN/AlN/GaN HEMTs
(S. Ganguly et al.,
Appl. Phys. Lett., 101, 253519 2012)
104) High
aspect ratio features in poly(methylglutarimide) using
EBL and solvent developers
(G. Karbasian et al.,
J. Vac. Sc. Tech. B, 30, 06FI01 2012)
(C. Pietzka, G. Li, M. Alomari, H.
Xing, D. Jena, and E. Kohn,
J. Appl. Phys., 112, 074508, 2012)
(F. Faria, J. Guo, P. Zhao, G. Li,
P. Kandaswamy, M. Wistey, H. Xing, and D.
Jena,
Appl. Phys. Lett., 101, 032109 2012)
97) Enhanced
THz detection in Resonant Tunnel Diode-Gated HEMTs
(B. Sensale-Rodriguez et al.,
ECS Trans., 49, 93, 2012)
95) InAlN/AlN/GaN
HEMTs with MBE-regrown contacts and fT=370 GHz
(Y. Zhang, Z. Hu, J. Guo, B.
Sensale-Rodriguez, G. Li, R. Wang, F. Faria, T. Fang, B. Song, X. Gao, S. Guo,
T. Kosel, G. Snider, P. Fay, D. Jena,
and H. Xing,
IEEE Electron
Device Lett., 33, 988, 2012)
(O. Laboutin, Y. Cao, W. Johnson, R.
Wang, G. Li, D. Jena, and H. Xing,
Appl. Phys. Lett., 100, 121909, 2012)
93) Effect
of Optical Phonon Scattering on the Performance of GaN Transistors
(T. Fang, R. Wang, H. Xing, S.
Rajan, and D. Jena,
IEEE
Electron Device Lett., 33, 709, 2012)
92) Ultra
thin GaN-on-Insulator Quantum Well FETs with Regrown MBE Contacts
(G. Li, R. Wang, J. Guo, J. Verma, Z. Hu, Y. Yue, F. Faria,
Y. Cao, M. Kelly, T. Kosel, H. Xing, and D.
Jena,
IEEE
Electron Device Lett., 33, 661, 2012)
91) MBE
regrown ohmics in In0.17AlN HEMTs with regrowth interface resistance
of 0.05 ohm-mm
(J. Guo, G. Li, F. Faria, Y. Cao, R.
Wang, J. Verma, X. Gao, S. Guo, E. Beam, A. Ketterson, M. Schuette, P. Saunier,
M Wistey, D. Jena, and H. Xing,
IEEE
Electron Device Lett., 33, 525,
2012)
87) Charge
transport in non-polar and semi-polar III-V nitride heterostructures
(A. Konar, A. Verma, T. Fang, P.
Zhao, R. Jana, and D. Jena,
Semicond. Sci. Technol., 27, 024018, 2012)
(P. Sivasubramani et al.,
Phys.
Stat. Solidi.(RRL), 6(1), 22 2012)
2011
85) FET
THz detectors operating in the quantum capacitance limited region
(B. Sensale-Rodriguez, L. Liu, R.
Wang, D. Jena, and H. Xing,
Int.
Journal of High Speed Electronics and Systems, 20(3), 597, 2011)
84) The
resurgence of III-Nitride materials development: AlInN HEMTs and GaN-on-Si
(O. Laboutin et al.,
ECS Transactions, 41(8), 301, 2011)
(K. Goodman, V. Protasenko, J.
Verma, T. Kosel, H. Xing, and D. Jena,
J.
Crystal Growth, 334, 113, 2011)
82) Presence
and origin of interface charges at atomic-layer deposited Al2O3/III-nitride
heterojunctions
(S. Ganguly, J. Verma, G. Li, T. Zimmermann,
H. Xing, and D. Jena,
Appl. Phys. Lett., 99, 193504, 2011)
81) N-Polar
III-nitride quantum well light emitting diodes with polarization-induced doping
(J. Verma, J. Simon, V. Protasenko,
T. Kosel, H. Xing, and D. Jena,
Appl. Phys. Lett., 99, 171104, 2011)
(R. Wang, et al.,
Appl. Phys. Express,
4, 096502, 2011)
74) Stark-Effect
Scattering in Rough Quantum Wells
(R. Jana, and D. Jena
Appl. Phys. Lett., 99, 012104 2011)
73) 220
GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs
(R. Wang, G. Li, J. Verma, B.
Sensale-Rodriguez, T. Fang, J. Guo, Z. Hu, O. Laboutin, Y. Cao, W. Johnson, G.
Snider, P. Fay, D. Jena, and H.
Xing,
IEEE
Electron Device Lett., 32(9),
1215 2011)
71) 210
GHz InAlN HEMTs with dielectric-free passivation
(R. Wang, G. Li, O. Laboutin, Y.
Cao, W. Johnson, G. Snider, P. Fay, D.
Jena, and H. Xing,
IEEE
Electron Device Lett., 32(7),
892 2011)
70) Subcritical
Barrier AlN/GaN E/D-Mode HFETs and Inverters
(T. Zimmermann et al.,
Phys.
Stat. Solidi.(a), 208, 1620 2011)
69) Metal-Face
InAlN/AlN/GaN HEMTs with regrown Ohmic contacts by Molecular Beam Epitaxy
(J. Guo, Y. Cao, C. Lian, T.
Zimmermann, G. Li, J. Verma, X. Gao, S. Guo, P. Saunier, M. Wistey, D. Jena, and Huili Xing
Phys.
Stat. Solidi.(a), 208, 1617 2011)
68) Polarization
Engineering in Group-III Nitride Heterostructures: New Opportunities for Device
Design
(D. Jena, J. Simon, K. Wang, Y. Cao, K. Goodman, J. Verma, S.
Ganguly, G. Li, K. Karda, V. Protasenko, C. Lian, T. Kosel, P. Fay, and H. Xing
Phys. Stat. Solidi.(a), 208,
1511 2011)
67) MBE
growth of high conductivity single and multiple AlN/GaN heterojunctions
(Y. Cao, K. Wang, G. Li, T. Kosel,
H. Xing, and D. Jena
J.
Cryst. Growth, 323, 529 2011)
66) Green
luminescence of InGaN nanowires grown on Silicon substrates by MBE
(K. Goodman, V. Protasenko, J.
Verma, T. Kosel, H. Xing, and D. Jena,
J. Appl. Phys., 109, 084336 2011)
65) Enhancement-Mode
InAlN/AlN/GaN HEMTs with 10-12A/mm leakage
current and 1012 on/off current ratio
(R. Wang, P. Saunier, Y. Tang, T.
Fang, X. Gao, S. Guo, G. Snider, P. Fay, D.
Jena, and H. Xing
IEEE
Electron Device Lett., 32 (3),
309 2011)
64) Charged
basal stacking fault scattering in nitride semiconductors
(A. Konar, T. Fang, N. Sun, and D. Jena
Appl. Phys. Lett., 98, 022109 2011)
2010
(G. Li, Y. Cao, H. Xing, and D. Jena
Appl. Phys. Lett., 97, 222110 2010)
(Y. Cao, H. Xing, and D. Jena
Appl. Phys. Lett., 97, 222116 2010)
(A. Konar, T. Fang, N. Sun, and D. Jena
Phys. Rev. B, 82, 193301 2010)
(R. Wang, P. Saunier, X. Xing, C.
Lian, X. Gao, S. Guo, G. Snider, P. Fay, D.
Jena, and H. Xing
IEEE
Electron Device Lett., 31(12),
1383 2010)
58) Threshold
Voltage Control in Al0.72Ga0.28N/AlN/GaN HEMTs by
Work-Function Engineering
(G. Li, T. Zimmermann, Y. Cao, C.
Lian, X. Xing, R. Wang, P. Fay, H. Xing, and D. Jena,
IEEE
Electron Device Lett., 31 (9),
954 2010)
57) Short-period
AlN/GaN p-type superlattices: Hole transport usage in p-n Junctions
(J. Simon, H. Xing, and D. Jena,
Phys.
Stat. Solidi (C), 7 (10), 2386
2010)
54) Polarization-engineered
removal of buffer leakage for GaN Transistors
(Y. Cao, T. Zimmermann, H. Xing
& D.
Appl. Phys. Lett., 96, 042102 2010)
53) Polarization
Induced Hole Doping in Wide Bandgap Uniaxial Semiconductor Heterostructures
(J. Simon, V. Protasenko, C. Lian,
H. Xing & D.
Science,
327, 60, 2010) Press: MIT
Tech Review
2009
52) Polarization
Induced Zener Tunnel Junctions in Wide Bandgap Heterostructures
(J. Simon, Z. Zhang, K. Goodman, H.
Xing, T. Kosel, P. Fay & D.
Phys. Rev. Lett.,
103, 026801, 2009)
(G. Xu, S. K. Tripathy, X. Mu, Y. J.
Ding, K. Wang, Y. Cao, D. Jena,
& J. B. Khurgin
Laser Physics,
19, 745, 2009)
49) 4
nm AlN Barrier all-binary HFETs with SiNx Gate Dielectric
(T. Zimermann, Y. Cao, D. Jena, P. Saunier, H. Xing
Int. J.
Jigh Speed Electronics & Systems, 19,
153, 2009)
47) Heat
Transport Mechanisms in Superlattices
(Y. K. Koh, Y. Cao, D. Cahill, &
D.
Adv.
Funct. Materials, 19, 610, 2009)
2008
44) GaN
and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy
(K. Goodman, K. Wang, X. Luo, J.
Simon, T. Kosel, & D.
Mater. Res. Soc. Symp. Proc.
Vol. 1080, 1080-O08-04, 2008)
42) Stokes
and anti-Stokes resonant Raman scattering from biased AlN/GaN heterostructures
(G. Xu, S. Tripathy, X. Mu, Y. Ding,
K. Wang, Y. Cao, D. Jena & J.
Khurgin
Appl. Phys. Lett., 93, 051912, 2008)
41) Isotope
disorder of phonons in GaN and its beneficial effect in high power field effect
transistors
(J. Khurgin, D.
Appl. Phys. Lett., 93, 032110, 2008)
40) AlN/GaN
insulated gate HEMTs with 2.3 A/mm output current and 480 mS/mm
transconductance
(T. Zimmermann, D. Deen, Y. Cao, J.
Simon, P. Fay, D.
IEEE
Electron Device Lett., 29 (7)
661, 2008)
39) Effect
of growth conditions on the conductivity of Mg doped p-type GaN by Molecular
Beam Epitaxy
(J. Simon & D.
Phys. Stat.
Sol. A, 205 1074 2008)
38) Structural
and transport properties of InN grown on GaN by MBE
(K. Wang, T. Kosel & D.
Phys.
Stat. Sol. C, 5 1811, 2008)
37) 2.3
nm barrier AlN/GaN HEMTs with insulated gates
(D. Deen, T. Zimmermann, Y. Cao, D.
Phys.
Stat. Sol. C, 5 2047, 2008)
(Y. Cao, K. Wang & D.
Phys.
Stat. Sol. C, 5 1873, 2008)
35) Formation
of Ohmic contacts to ultrathin AlN/GaN HEMTs
(T. Zimmermann, D. Deen, Y. Cao, D.
Phys.
Stat. Sol. C, 5 2030, 2008)
(Y. Cao, K. Wang, A. Orlov, H. Xing
& D.
Appl. Phys. Lett., 92, 152112, 2008)
32) Evidence
of hot electrons generated from an AlN/GaN HEMT
(S. Tripathy, G. Xu, X. Mu, Y. Ding,
K. Wang, Y. Cao, D. Jena, & J.
Khurgin
Appl. Phys. Lett., 92, 013513, 2008)
2007
31) Hot
phonon effect on electron velocity saturation in GaN: A second look
(J. Khurgin, Y. Ding, & D.
Appl. Phys. Lett., 91, 252104, 2007)
30) Tailoring
the carrier mobility in semiconductor nanowires by remote dielectrics
(A. Konar & D.
J. Appl. Phys., 102, 123705, 2007)
29) Conduction
band offset at the InN/GaN heterojunction
(K. Wang, C. Lian, N. Su, D.
Appl. Phys. Lett., 91, 232117, 2007)
28) MBE-grown
Ultra-Shallow AlN/GaN HFET Technology
(H. Xing, D. Deen, Y. Cao, T. Zimmerman,
P. Fay, & D.
ECS
Transactions, 11, 233, 2007)
24) A
High-Mobility Window for Two-Dimensional Electron Gases at Ultrathin AlN/GaN
Heterojunctions
(Y. Cao & D.
Appl. Phys. Lett., 90, 182112, 2007)
23) Resonant
Terahertz generation from InN thin films
(X. Mu, Y. J. Ding, K. Wang, D. Jena & Y. B. Zotova
Opt. Lett., 32, 1432, 2007)
21) Enhancement
of carrier mobility in semiconductor nanostructures by dielectric engineering
(D.
Phys. Rev. Lett.,
98, 136805, 2007) [In the News
– a) NanoTech,
b) Also featured in the Virtual
Journal of Nanoscale Science and Technology]
2006
20) Compositional
modulation and optical emission in AlGaN epitaxial films
(M. Gao, S. Bradley, Y. Cao, D. Jena, Y. Lin, S. Ringel, H. Hwang,
W. Schaff, & L. Brillson
J. Appl. Phys., 100, 103512, 2006)
19) Hot
Phonons in Si-Doped GaN
(J. Liberis, M. Ramonas, O. Kiprijanovic, A. Matulionis, N.
Goel, J. Simon, K. Wang, H. Xing, & D.
Appl. Phys. Lett., 89, 202117, 2006)
(K. Wang, Y. Cao, J. Simon, J. Zhang, A. Mintairov, J. Merz, D.
Hall, T. Kosel, & D.
Appl. Phys. Lett., 89, 162110, 2006)
17) Optical
study of hot-electron transport in GaN: Signatures of the hot-phonon effect
(K. Wang, J. Simon, N. Goel & D.
Appl. Phys. Lett., 88, 022103, 2006)
(J. Simon, K. Wang, H. Xing, D.
Appl. Phys. Lett., 88, 042109, 2006)
15) Electron
mobility in graded AlGaN alloys
(S. Rajan, S. DenBaars, U. Mishra,
H. Xing. & D.
Appl. Phys. Lett., 88, 042103, 2006)
2004
13) Spin
scattering by dislocations in III-V Semiconductors
(D.
Phys. Rev. B 70, 245203, 2004) [Also featured
in the Virtual Journal of Nanoscience and Technology, Dec
2004 issue.]
12) Dipole
Scattering in highly polar semiconductor alloys
(W. Zhao and D.
J. Appl. Phys.
96, 2095, 2004)
11) AlGaN/GaN
polarization-doped field-effect transistor for microwave power applications
(Siddharth Rajan, Huili Xing, Steve DenBaars, Umesh K.
Mishra, and D.
Appl. Phys.
Lett., 84, 1591, 2004)
As a
graduate student @ UC Santa Barbara (Fall
1998 - Spring 2003)
2003
10) Magnetotransport
properties of a polarization-doped three-dimensional electron slab
(D. Jena, S. Heikman, J.
S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher,
Phys. Rev. B 67
153306, 2003)
9) Explanation
of anomalously high b in GaN-based
bipolar transistors
(H. Xing, D.
IEEE Elect. Dev. Lett. 24 4, 2003)
(D. Jena, S. Heikman, J. S. Speck, A.
Gossard, U. K. Mishra, A. Link, and O. Ambacher,
Phys.
Stat. Sol. C, 0 2339, 2003)
2002
7) Quantum
and classical scattering times due to charged dislocations in an impure
electron gas
(D.
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