Books [Category: Gallium Nitride Materials Physics and Devices]

 

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Polarization Effects in Semiconductors: From Ab-Initio Theory to Device Applications

Springer, Dec 2007, edited by Colin Wood and Debdeep Jena. (Available from Amazon).

 

Journal Papers [Category: Gallium Nitride Materials Physics and Devices]

 

·            Get the preprints of papers posted on the arXivs. 

·            We have published in IEEE journals, IEDM/DRC, APL, Science, Nature journals, Physical Review journals, JAP, Nano Letters, etc. 

·            The complete list of papers below is sorted into categories here:

GaN materials and Devices

Deep-UV photonics

2D Crystals

Oxide Electronics

Sub-Boltzmann Switches

Theory and Modeling

 

Highlights of our contributions to the area of Gallium Nitride Materials Physics and Devices

 

      38) 2016: Demonstration of sub 230 nm emission from GaN quantized heterostructures for deep-UV LEDs by MBE.

      37) 2016: Demonstration of avalanche capability in GaN pn diodes.

      36) 2015: Demonstration of very low leakage MBE-grown homoepitaxial GaN pn diodes on bulk substrates.

      35) 2015: Introduced the idea of negative capacitance in active piezoelectric-gated FETs.

      34) 2015: Evaluation of the potential for polarization-enhanced GaN based Tunnel-FETs for low-power switching.

      33) 2014: Demonstration of a novel GaN heterostructure barrier diode with polarization-induced delta-doping.

      32) 2014: New polarization-induced SOI-like double-heterostructure AlN/GaN/AlN QW HEMT physics on an AlN platform.

      31) 2014: First demonstration of a tunnel-injection deep-UV quantum-dot LED with polarization-induced p-type doping.

      30) 2014: Demonstration of all-MBE RF GaN HEMTs on Silicon with regrown ohmic contacts.

      29) 2013: Discovery of ultrahigh density 2D hole gases in GaN-on-AlN heterostructures, demonstration of E/D mode p-channel HFETs.

      28) 2013: Demonstration of a 400GHz fT GaN HEMT with regrown contacts.

      27) 2013: First demonstration of a tunnel-injection deep-UV quantum-dot LED.

      26) 2012: Identifed how Frenkel-Poole and Fowler Nordheim gate leakage is modified by polarization.

      25) 2012: Introduced a new phonon-ballistic scattering model for RF performance limits for GaN HEMTs.

      24) 2012: First demonstration of a pseudomorphic ultra-thin body strained GaN QW HEMT on AlN with regrown contacts.

      23) 2012: Ultralow resistance MBE n+ GaN contacts and MBE regrown ohmic contacts for high-speed metal-polar GaN HEMTs.

      22) 2012: Identified differences in charge transport in polar, semi-polar, and non-polar GaN heterostructure devices.

      21) 2011: Demonstration of GaN nanowire growth on ALD surfaces by MBE.

      20) 2011: First demonstration of a N-polar quantum-well LED with polarization-induced p-type hole injector.

      19) 2011: Introduced the concept of Stark-effect scattering in polar quantum well devices.

      18) 2011: Identified role of polarization charges at ALD/Nitride heterointerfaces on GaN HEMT physics.

      17) 2011: Identified several new avenues for polarization-engineered ternary and quaternary nitride heterostructure devices.

      16) 2010: First demonstration of polarization-induced p-type doping in wide-bandgap semiconductors.

      15) 2010: Identified polarization-enhanced remote-roughness scattering in GaN HEMTs.

      14) 2010: Demonstrated work-function engineering for threshold voltage control of GaN HEMTs.

      13) 2009: Uncovered the physics of polarization-induced Zener tunnel junctions in wide-bandgap heterostructures.

      12) 2009: Evaluation of thermal conductivity of AlN/GaN superlattices.

      11) 2008: Demonstration of a MBE high-performance AlN/GaN HEMT as an enabler of ultrafast RF nitride electronics.

      10) 2008: Introduction of the concept of isotope engineering for boosting the speed of GaN HEMTs.

      9) 2008: Demonstrated the lowest sheet resistance 2DEGs and quantum oscillations in AlN/GaN heterojunctions.

      8) 2007: Identified a high mobility window in AlN/GaN 2DEGs that enabled scaling for high-speed nitride HEMTs.

      7) 2006: Determination of intrinsic and defect-related mobility limits in InN.

      6) 2004: Evaluation of the effect spin lifetimes due to dislocations in wide-bandgap semiconductors.

      5) 2003: First observation of Shubnikov de-Haas oscillations in a polarization-induced 3-dimensional electron gas in graded Al(Ga)N.

      4) 2002: First demonstration of polarization-induced n-type doping in wide-bandgap semiconductors.

      3) 2000: Evaluation of the effect of scattering from strain fields of dislocations on 2DEG mobilities in GaN (and other!) HEMTs.

      2) 2000: Introduced a new dipole scattering mechanism in GaN (and other polar) heterostructures.

      1) 2000: Evaluation of the effect of charged dislocation scattering on 2DEG mobilities in GaN (and other!) HEMTs.

 

2016

 

      188) Deep-UV Emission from Ultra-Thin GaN/AlN Heterostructures

            (D. Bayerl et al.,

            Appl. Phys. Lett., accepted, to appear 2016)

      181) Sub-230 nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski-Krastanov mode

            (S. M. Islam et al.,

            Jap. J. Appl. Phys., 55, 05FF06 2016)

      180) High-quality InN films on GaN using graded InGaN buffers by MBE

            (S. M. Islam et al.,

            Jap. J. Appl. Phys., 55, 05FD12 2016)

      178) 1.7 kV and 0.55 mOhm.cm2 GaN p-n diodes on Bulk GaN substrates with Avalanche Capability

            (K. Nomoto et al.,

            IEEE EDL, 37, 161 2016)

      177) Ultralow-Leakage AlGaN/GaN HEMTs on Si with Non-Alloyed Regrown Ohmic Contacts

            (B. Song et al.,

            IEEE EDL, 37, 16 2016)

 

 

2015

 

      176) Near unity ideality factor and Shockley-Read_Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

            (Z. Hu et al.,

            Appl. Phys. Lett., 92, 085111 2015)

      175) High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

            (M. Qi et al.,

            Appl. Phys. Lett., 107, 232101 2015)

      173) Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

            (X. Yan et al.,

            Appl. Phys. Lett., 107, 163504 2015)

      170) Localized surface phonon polariton resonances in polar gallium nitride

            (K. Feng et al.,

            Applied Physics Letters, 107, 081108 2015)

      169) Transistor Switches using Active Piezoelectric Gate Barriers

            (R. Jana et al.,

            IEEE J. Expl. CDC, 1, 35 2015)

      168) Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

            (W. Li et al.,

            IEEE J. Expl. CDC, 1, 28 2015)

      166) Low-temperature AlN growth by MBE and its application in HEMTs

            (F. Faria et al.,

            J. Crystal Growth, 425, 133 2015)

      164) 1.9 kV AlGaN/GaN lateral Schottky barrier diodes on Silicon

            (M. Zhu et al.,

            IEEE Electron Dev. Lett., 36, 375 2015)

      162) Dual optical marker Raman characterization of strained GaN channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes

            (M. Qi et al.,

            Appl. Phys. Lett., 106, 041906 2015)

 

2014

 

      158) 2D Crystal Semiconductors: Intimate Contacts (News & Views)

            (D. Jena, K. Banerjee, H. Xing

            Nature Materials, 13, 1076 2014)

      157) Sub 60mV/decade Steep Transistors with Compliant Piezoelectric Gate Barriers

            (R. Jana et al.,

            IEDM Tech. Digest, 14, 347 2014)

      154) Strain sensitivity in the nitrogen 1s NEXAFS spectra of gallium nitride

            (A. Ritchie et al.,

            Appl. Surf. Sci., 316, 232, 2014)

      153) Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing

            (Y. Yue, X. Yan, W. Li, H. G. Xing, D. Jena, and P .Fay,

            J. Vac. Sci. Tech. B, 32, 061201, 2014)

      151) First-principles study of high-field related electronic behavior of group-III nitrides

            (Q. Yan, E. Kioupakis, D. Jena, C. van de Walle,

            Phys. Rev. B, 90, 121201(R), 2014)

      150) Plasma-MBE growth conditions of AlGaN/GaN HEMTs on Silicon and their device characteristics with epitaxially regrown ohmic contacts

            (S. Ganguly, J. Verma, H. G. Xing, and D. Jena,

            Appl. Phys. Exp, 7, 105501, 2014)

      144) GaN Heterostructure Barrier Diodes (HBD) exploiting Polarization-induced Delta-doping

            (P. Zhao et al.,

            IEEE Electron Dev. Lett., 35, 615, 2014)

      143) Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructures FETs on AlN

            (G. Li et al.,

            Appl. Phys. Lett. 104, 193506, 2014)

      142) Two-dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells

            (Cheng-Ying Huang, J. Law, H. Lu, D. Jena, M. J. W. Rodwell, and A. C. Gossard,

            J. Appl. Phys. 115, 123711 2014)

      140) Impact of CF4 plasma treatment on threshold voltage and mobility in Al2O3/InAlN/GaN MOSHEMTs

            (Z. Hu et al.,

            Appl. Phys. Exp, 7, 031002 2014)

      139) Tunnel-Injection Quantum Dot deep-UV LEDs with Polarization-Induced Doping in III-Nitride Heterostructures

            (J. Verma et al.,

            Appl. Phys. Lett., 104, 021105 2014)

      138) AlGaN/GaN HEMTs on Silicon by MBE with regrown contacts and fT=153 GHz

            (S. Ganguly et al.,

            Phys. Stat. Sol. (c), 11, 887, 2014)

      137) Performance enhancement of InAlN/GaN HEMTs by KOH surface treatment

            (S. Ganguly et al.,

            Appl. Phys. Exp, 7, 034102 2014)

      136) Effect of Fringing Capacitances on the RF Performance of GaN HEMTs with T-Gates

            (B. Song et al.,

            IEEE Trans. Electron Devices, 61, 747, 2014)

 

2013

 

      134) Dispersion- free operation in InAlN-based HEMTs with ultrathin or no passivation

            (R. Wang et al.,

            IEDM Tech. Digest, 13, 703 2013)

      131) On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors

            (R. Jana et al.,

            Phys. Stat. Sol. (c), 10, 1469 2013)

      130) Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs

            (J. A. Ferrer-Perez et al.,

            J. Electronic Materials, Nov 2013)

      129) Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

            (G. Li et al.,

            IEEE Electron Dev. Lett., 34, 852, 2013)

      123) Ultrascaled InAlN/GaN HEMTs with fT of 400 GHz

            (Y. Yue, et al.,

            Jpn. J. Appl. Phys, 52, 08JN14, 2013)

      119) Power amplification at THz via plasma wave excitation in RTD-gated HEMTs

            (B. Sensale-Rodriguez, et al.,

            IEEE Trans. THz. Sci. Tech., 3, 200, 2013)

      118) InGaN channel high electron mobility transistors with InAlGaN barrier and ft/fmax or 260/220 GHz

            (R. Wang, et al.,

            Appl. Phys. Express, 6, 016503, 2013)

      115) Quaternary barrier InAlGaN HEMTs with ft/fmax of 230/300 GHz

            (R. Wang et al.,

            IEEE Electron Dev. Lett., 34, 378 2013)

      114) Tunnel-injection GaN quantum-dot ultraviolet light-emitting diodes

            (J. Verma et al.,

            Appl. Phys. Lett., 101, 032109 2013)

      112) Time-delay analysis in high-speed gate-recessed E-Mode InAlN HEMTs

            (B. Sensale-Rodriguez, et al.,

            Solid State Electron., 80, 67, 2013)

 

2012

 

      107) Polarization effects on gate leakage in InAlN/AlN/GaN HEMTs

            (S. Ganguly et al.,

            Appl. Phys. Lett., 101, 253519 2012)

      104) High aspect ratio features in poly(methylglutarimide) using EBL and solvent developers

            (G. Karbasian et al.,

            J. Vac. Sc. Tech. B, 30, 06FI01 2012)

      102) Surface potential analysis of AlN/GaN heterostructures by electrochemical capacitance-voltage measurements

            (C. Pietzka, G. Li, M. Alomari, H. Xing, D. Jena, and E. Kohn,

            J. Appl. Phys., 112, 074508, 2012)

      99) Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

            (F. Faria, J. Guo, P. Zhao, G. Li, P. Kandaswamy, M. Wistey, H. Xing, and D. Jena,

            Appl. Phys. Lett., 101, 032109 2012)

      97) Enhanced THz detection in Resonant Tunnel Diode-Gated HEMTs

            (B. Sensale-Rodriguez et al.,

            ECS Trans., 49, 93, 2012)

      95) InAlN/AlN/GaN HEMTs with MBE-regrown contacts and fT=370 GHz

            (Y. Zhang, Z. Hu, J. Guo, B. Sensale-Rodriguez, G. Li, R. Wang, F. Faria, T. Fang, B. Song, X. Gao, S. Guo, T. Kosel, G. Snider, P. Fay, D. Jena, and H. Xing,

            IEEE Electron Device Lett., 33, 988, 2012)

      94) InGaN Channel High Electron Mobility Transistor Structures Grown by Metal Organic Chemical Vapor Deposition

            (O. Laboutin, Y. Cao, W. Johnson, R. Wang, G. Li, D. Jena, and H. Xing,

            Appl. Phys. Lett., 100, 121909, 2012)

      93) Effect of Optical Phonon Scattering on the Performance of GaN Transistors

            (T. Fang, R. Wang, H. Xing, S. Rajan, and D. Jena,

            IEEE Electron Device Lett., 33, 709, 2012)

      92) Ultra thin GaN-on-Insulator Quantum Well FETs with Regrown MBE Contacts  

(G. Li, R. Wang, J. Guo, J. Verma, Z. Hu, Y. Yue, F. Faria, Y. Cao, M. Kelly, T. Kosel, H. Xing, and D. Jena,

            IEEE Electron Device Lett., 33, 661, 2012)

      91) MBE regrown ohmics in In0.17AlN HEMTs with regrowth interface resistance of 0.05 ohm-mm

            (J. Guo, G. Li, F. Faria, Y. Cao, R. Wang, J. Verma, X. Gao, S. Guo, E. Beam, A. Ketterson, M. Schuette, P. Saunier, M Wistey, D. Jena, and H. Xing,

            IEEE Electron Device Lett., 33, 525, 2012)

      87) Charge transport in non-polar and semi-polar III-V nitride heterostructures

            (A. Konar, A. Verma, T. Fang, P. Zhao, R. Jana, and D. Jena,

            Semicond. Sci. Technol., 27, 024018, 2012)

      86) In-situ X-Ray photoelectron spectroscopy of trimethly aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates

(P. Sivasubramani et al.,

            Phys. Stat. Solidi.(RRL), 6(1), 22 2012)

 

2011

 

      85) FET THz detectors operating in the quantum capacitance limited region

            (B. Sensale-Rodriguez, L. Liu, R. Wang, D. Jena, and H. Xing,

            Int. Journal of High Speed Electronics and Systems, 20(3), 597, 2011)

      84) The resurgence of III-Nitride materials development: AlInN HEMTs and GaN-on-Si

            (O. Laboutin et al.,

            ECS Transactions, 41(8), 301, 2011)

      83) Molecular Beam Epitaxial growth of Gallium Nitride Nanowires on Atomic-Layer Deposited Aluminum Oxide

            (K. Goodman, V. Protasenko, J. Verma, T. Kosel, H. Xing, and D. Jena,

            J. Crystal Growth, 334, 113, 2011)

      82) Presence and origin of interface charges at atomic-layer deposited Al2O3/III-nitride heterojunctions

            (S. Ganguly, J. Verma, G. Li, T. Zimmermann, H. Xing, and D. Jena,

            Appl. Phys. Lett., 99, 193504, 2011)

      81) N-Polar III-nitride quantum well light emitting diodes with polarization-induced doping

            (J. Verma, J. Simon, V. Protasenko, T. Kosel, H. Xing, and D. Jena,

            Appl. Phys. Lett., 99, 171104, 2011)

      78) Si-containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors

            (R. Wang, et al.,

            Appl. Phys. Express, 4, 096502, 2011)

      74) Stark-Effect Scattering in Rough Quantum Wells

            (R. Jana, and D. Jena

            Appl. Phys. Lett., 99, 012104 2011)

      73) 220 GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

            (R. Wang, G. Li, J. Verma, B. Sensale-Rodriguez, T. Fang, J. Guo, Z. Hu, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing,

            IEEE Electron Device Lett., 32(9), 1215 2011)

      71) 210 GHz InAlN HEMTs with dielectric-free passivation

            (R. Wang, G. Li, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing,

            IEEE Electron Device Lett., 32(7), 892 2011)

      70) Subcritical Barrier AlN/GaN E/D-Mode HFETs and Inverters

            (T. Zimmermann et al.,

            Phys. Stat. Solidi.(a), 208, 1620 2011)

      69) Metal-Face InAlN/AlN/GaN HEMTs with regrown Ohmic contacts by Molecular Beam Epitaxy

            (J. Guo, Y. Cao, C. Lian, T. Zimmermann, G. Li, J. Verma, X. Gao, S. Guo, P. Saunier, M. Wistey, D. Jena, and Huili Xing

            Phys. Stat. Solidi.(a), 208, 1617 2011)

      68) Polarization Engineering in Group-III Nitride Heterostructures: New Opportunities for Device Design

            (D. Jena, J. Simon, K. Wang, Y. Cao, K. Goodman, J. Verma, S. Ganguly, G. Li, K. Karda, V. Protasenko, C. Lian, T. Kosel, P. Fay, and H. Xing

            Phys. Stat. Solidi.(a), 208, 1511 2011)

      67) MBE growth of high conductivity single and multiple AlN/GaN heterojunctions

            (Y. Cao, K. Wang, G. Li, T. Kosel, H. Xing, and D. Jena

            J. Cryst. Growth, 323, 529 2011)

      66) Green luminescence of InGaN nanowires grown on Silicon substrates by MBE

            (K. Goodman, V. Protasenko, J. Verma, T. Kosel, H. Xing, and D. Jena,

            J. Appl. Phys., 109, 084336 2011)

      65) Enhancement-Mode InAlN/AlN/GaN HEMTs with 10-12A/mm leakage current and 1012 on/off current ratio

            (R. Wang, P. Saunier, Y. Tang, T. Fang, X. Gao, S. Guo, G. Snider, P. Fay, D. Jena, and H. Xing

            IEEE Electron Device Lett., 32 (3), 309 2011)

      64) Charged basal stacking fault scattering in nitride semiconductors

            (A. Konar, T. Fang, N. Sun, and D. Jena

            Appl. Phys. Lett., 98, 022109 2011)

 

2010

 

      63) High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

            (G. Li, Y. Cao, H. Xing, and D. Jena

            Appl. Phys. Lett., 97, 222110 2010)

      62) Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors

            (Y. Cao, H. Xing, and D. Jena

            Appl. Phys. Lett., 97, 222116 2010)

      61) Anisotropic charge transport in nonpolar GaN quantum wells: Polarization-induced line charge and interface roughness scattering

            (A. Konar, T. Fang, N. Sun, and D. Jena

            Phys. Rev. B, 82, 193301 2010)

      60) Gate-recessed Enhancement-Mode InAlN/AlN/GaN HEMTs with 1.9 A/mm Drain Current Density and 800 mS/mm Transconductance

            (R. Wang, P. Saunier, X. Xing, C. Lian, X. Gao, S. Guo, G. Snider, P. Fay, D. Jena, and H. Xing

            IEEE Electron Device Lett., 31(12), 1383 2010)

      58) Threshold Voltage Control in Al0.72Ga0.28N/AlN/GaN HEMTs by Work-Function Engineering

            (G. Li, T. Zimmermann, Y. Cao, C. Lian, X. Xing, R. Wang, P. Fay, H. Xing, and D. Jena,

            IEEE Electron Device Lett., 31 (9), 954 2010)

      57) Short-period AlN/GaN p-type superlattices: Hole transport usage in p-n Junctions

            (J. Simon, H. Xing, and D. Jena,

            Phys. Stat. Solidi (C), 7 (10), 2386 2010)

      54) Polarization-engineered removal of buffer leakage for GaN Transistors

            (Y. Cao, T. Zimmermann, H. Xing & D. Jena

            Appl. Phys. Lett., 96, 042102 2010)

      53) Polarization Induced Hole Doping in Wide Bandgap Uniaxial Semiconductor Heterostructures

            (J. Simon, V. Protasenko, C. Lian, H. Xing & D. Jena

            Science, 327, 60, 2010)  Press: MIT Tech Review

 

2009

 

      52) Polarization Induced Zener Tunnel Junctions in Wide Bandgap Heterostructures

            (J. Simon, Z. Zhang, K. Goodman, H. Xing, T. Kosel, P. Fay & D. Jena

            Phys. Rev. Lett., 103, 026801, 2009)

      50) Investigations of hot electrons and hot phonons generated in an AlN/GaN High-Electron Mobility Transistor

            (G. Xu, S. K. Tripathy, X. Mu, Y. J. Ding, K. Wang, Y. Cao, D. Jena, &  J. B. Khurgin

            Laser Physics, 19, 745, 2009)

      49) 4 nm AlN Barrier all-binary HFETs with SiNx Gate Dielectric

            (T. Zimermann, Y. Cao, D. Jena, P. Saunier, H. Xing

            Int. J. Jigh Speed Electronics & Systems, 19, 153, 2009)

      47) Heat Transport Mechanisms in Superlattices

            (Y. K. Koh, Y. Cao, D. Cahill, & D. Jena

            Adv. Funct. Materials, 19, 610, 2009)

 

2008

 

      44) GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy

            (K. Goodman, K. Wang, X. Luo, J. Simon, T. Kosel, & D. Jena

            Mater. Res. Soc. Symp. Proc. Vol. 1080, 1080-O08-04, 2008)

      42) Stokes and anti-Stokes resonant Raman scattering from biased AlN/GaN heterostructures

            (G. Xu, S. Tripathy, X. Mu, Y. Ding, K. Wang, Y. Cao, D. Jena & J. Khurgin

            Appl. Phys. Lett., 93, 051912, 2008)

      41) Isotope disorder of phonons in GaN and its beneficial effect in high power field effect transistors

            (J. Khurgin, D. Jena & Y. Ding

            Appl. Phys. Lett., 93, 032110, 2008)

      40) AlN/GaN insulated gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance

            (T. Zimmermann, D. Deen, Y. Cao, J. Simon, P. Fay, D. Jena, & H. Xing

            IEEE Electron Device Lett., 29 (7) 661, 2008)

      39) Effect of growth conditions on the conductivity of Mg doped p-type GaN by Molecular Beam Epitaxy

            (J. Simon & D. Jena

            Phys. Stat. Sol. A, 205 1074 2008)

      38) Structural and transport properties of InN grown on GaN by MBE

            (K. Wang, T. Kosel & D. Jena

            Phys. Stat. Sol. C, 5 1811, 2008)

      37) 2.3 nm barrier AlN/GaN HEMTs with insulated gates

            (D. Deen, T. Zimmermann, Y. Cao, D. Jena, & H. Xing

            Phys. Stat. Sol. C, 5 2047, 2008)

      36) Electron transport properties of low sheet-resistance two-dimensional electron gases in ultrathin AlN/GaN heterojunctions grown by MBE

            (Y. Cao, K. Wang & D. Jena

Phys. Stat. Sol. C, 5 1873, 2008)

      35) Formation of Ohmic contacts to ultrathin AlN/GaN HEMTs

            (T. Zimmermann, D. Deen, Y. Cao, D. Jena, & H. Xing

Phys. Stat. Sol. C, 5 2030, 2008)

      34) Very Low Sheet Resistance and Shubnikov de-Haas Oscillations in Two-Dimensional Electron Gases at Ultrathin Binary AlN/GaN Heterojunctions

            (Y. Cao, K. Wang, A. Orlov, H. Xing & D. Jena

            Appl. Phys. Lett., 92, 152112, 2008)

      32) Evidence of hot electrons generated from an AlN/GaN HEMT

            (S. Tripathy, G. Xu, X. Mu, Y. Ding, K. Wang, Y. Cao, D. Jena, & J. Khurgin

            Appl. Phys. Lett., 92, 013513, 2008)

 

2007

 

      31) Hot phonon effect on electron velocity saturation in GaN: A second look

            (J. Khurgin, Y. Ding, & D. Jena

            Appl. Phys. Lett., 91, 252104, 2007)

      30) Tailoring the carrier mobility in semiconductor nanowires by remote dielectrics

            (A. Konar & D. Jena

            J. Appl. Phys., 102, 123705, 2007)

      29) Conduction band offset at the InN/GaN heterojunction

            (K. Wang, C. Lian, N. Su, D. Jena, & J. Timler

            Appl. Phys. Lett., 91, 232117, 2007)

      28) MBE-grown Ultra-Shallow AlN/GaN HFET Technology

            (H. Xing, D. Deen, Y. Cao, T. Zimmerman, P. Fay, & D. Jena

            ECS Transactions, 11, 233, 2007)

      24) A High-Mobility Window for Two-Dimensional Electron Gases at Ultrathin AlN/GaN Heterojunctions

            (Y. Cao & D. Jena

            Appl. Phys. Lett., 90, 182112, 2007)

      23) Resonant Terahertz generation from InN thin films

            (X. Mu, Y. J. Ding, K. Wang, D. Jena & Y. B. Zotova

            Opt. Lett., 32, 1432, 2007)

      21) Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering

            (D. Jena & A. Konar

            Phys. Rev. Lett., 98, 136805, 2007) [In the News – a) NanoTech, b) Also featured in the Virtual Journal of Nanoscale Science and Technology]

 

2006

 

      20) Compositional modulation and optical emission in AlGaN epitaxial films

            (M. Gao, S. Bradley, Y. Cao, D. Jena, Y. Lin, S. Ringel, H. Hwang, W. Schaff, & L. Brillson

            J. Appl. Phys., 100, 103512, 2006)

      19) Hot Phonons in Si-Doped GaN

(J. Liberis, M. Ramonas, O. Kiprijanovic, A. Matulionis, N. Goel, J. Simon, K. Wang, H. Xing, & D. Jena,

            Appl. Phys. Lett., 89, 202117, 2006)

      18) Effect of dislocation scattering on the transport properties of InN grown on GaN substrate by Molecular Beam Epitaxy

            (K. Wang, Y. Cao, J. Simon, J. Zhang, A. Mintairov, J. Merz, D. Hall, T. Kosel, & D. Jena,

            Appl. Phys. Lett., 89, 162110, 2006)

      17) Optical study of hot-electron transport in GaN: Signatures of the hot-phonon effect

            (K. Wang, J. Simon, N. Goel & D. Jena,

            Appl. Phys. Lett., 88, 022103, 2006)

      16) Carrier transport and confinement in polarization-induced 3-D electron slabs: Importance of alloy scattering

            (J. Simon, K. Wang, H. Xing, D. Jena & S. Rajan,

            Appl. Phys. Lett., 88, 042109, 2006)

      15) Electron mobility in graded AlGaN alloys

            (S. Rajan, S. DenBaars, U. Mishra, H. Xing. & D. Jena,

            Appl. Phys. Lett., 88, 042103, 2006)

 

2004

 

      13) Spin scattering by dislocations in III-V Semiconductors

            (D. Jena,

            Phys. Rev. B 70, 245203, 2004) [Also featured in the Virtual Journal of Nanoscience and Technology, Dec 2004 issue.]

      12) Dipole Scattering in highly polar semiconductor alloys

(W. Zhao and D. Jena,

J. Appl. Phys. 96, 2095, 2004)

11) AlGaN/GaN polarization-doped field-effect transistor for microwave power applications

(Siddharth Rajan, Huili Xing, Steve DenBaars, Umesh K. Mishra, and D. Jena,

Appl. Phys. Lett., 84, 1591, 2004)

 

As a graduate student @ UC Santa Barbara (Fall 1998 - Spring 2003)

 

2003

 

10) Magnetotransport properties of a polarization-doped three-dimensional electron slab

(D. Jena, S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher,

Phys. Rev. B 67 153306, 2003)

9)   Explanation of anomalously high b in GaN-based bipolar transistors

(H. Xing, D. Jena, M. J. W. Rodwell, and U. K. Mishra,

IEEE Elect. Dev. Lett. 24 4, 2003)

8)   Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN

(D. Jena, S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher,

Phys. Stat. Sol. C, 0 2339, 2003)

 

2002

 

7)   Quantum and classical scattering times due to charged dislocations in an impure electron gas

(D. Jena and U. K. Mishra,

Phys. Rev. B 66 241307, 2002)

6)   Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys

(D. Jena, S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, and I. P. Smorchkova,

Appl. Phys. Lett., 81 4395, 2002)

5)   Effect of p-doped overlayer thickness on RF-dispersion in GaN JFETs

(A.Jimenez, D. Buttari, D. Jena, R. Coffie, S. Heikman, N. Q. Zhang, L. Shen, E. Calleja, E. Munoz, J. Speck, and U.K. Mishra,

IEEE Elec. Device Letters, 23 306, 2002)

4)   Effect of scattering by strain fields surrounding edge dislocations on electron transport in 2DEGs

(D. Jena and U. K. Mishra,

Appl. Phys. Lett., 80 64, 2002)

 

2001

 

3)   Electron transport in III-V nitride 2DEGs

(D. Jena, I. Smorchkova, A. Gossard, U. K. Mishra,

Phys. Stat. Sol. B, 228 617, 2001)

 

2000

 

2)   Dipole scattering in polarization induced two-dimensional electron gases

(D. Jena, A. C. Gossard, U. K. Mishra,

J. Appl. Phys., 88 4734, 2000)

1)   Dislocation scattering in a two-dimensional electron gas 

(D. Jena, A. C. Gossard, U. K. Mishra,

Appl. Phys. Lett., 76 1707, 2000)

 

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