[Figure from this paper]

Journal Papers [Category: 2D Crystal Materials and Devices]

· Get the preprints of papers posted on the arXivs.

· We have published in IEEE journals, IEDM/DRC, APL, Science, Nature journals, Physical Review journals, JAP, Nano Letters, etc.

· The complete list of papers below is sorted into categories here:

GaN materials and Devices

Deep-UV photonics

2D Crystals

Oxide Electronics

Sub-Boltzmann Switches

Theory and Modeling

Highlights of our contributions to the area of 2D Crystal Materials and Devices

18) 2016: Demonstration of controlled growth of van der Waals heterostructures by MBE.

17) 2015: Demonstration of a broken gap Esaki-diode with NDR in a mismatched 2D crystal heterostructure.

16) 2015: Proposal and evaluation of a very low-power transistor using atomically thin TMD semiconductor heterostructures (the THIN-TFET).

15) 2015: Identified and evaluated carrier statistics and quantum capacitance effects in atomically thin gapped semiconductors.

14) 2014: Demonstrated large-area epitaxial graphene nanoribbon FETs with record high current drives.

13) 2014: Demonstration of high-voltage quasi-layered FETs using the wide-bandgap semiconductor Ga₂O₃.

12) 2014: Identified and evaluated scattering mechanisms and mobility limits in atomically thin semiconductors.

11) 2013: Identified and evaluated the advantages of TMD based low-power Tunneling FETs.

10) 2013: First evaluation of Zener tunneling in TMD semiconductors.

9) 2013: Proposal of the SymFET: a novel graphene tunneling transistor. Experimentally verified.

8) 2012: First demonstration of TMD semiconductor transistors with current saturation and inversion in multilayer MoS₂ FETs.

7) 2012: Prediction of strong room-temperature NDR in graphene-insulator-graphene tunnel junctions. Experimentally verified.

6) 2012: Demonstration of broadband THz modulators using graphene.

5) 2010: Study of the effect of remote phonon scattering from high-K dielectrics on mobility in layered materials.

4) 2008: First evaluation of Zener tunneling in GNRs, and the first proposal and evaluation of the GNR Tunneling-FET (GNR TFET).

3) 2008: First evaluation of LER scattering and mobility in Graphene Nano Ribbons.

2) 2007: First prediction of the strong effect of dielectric environment on transport in 2D crystal semiconductors. Experimentally verified.

1) 2007: Evaluated the carrier statistics and quantum capacitance in graphene/Dirac materials and nanoribbons. Experimentally verified.

2016

186) Two-Dimensional Semiconductors for Transistors

(M. Chhowalla, D. Jena, and H. Zhang,

Nature Reviews, 1, 1-15 2016)

185) Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth

(P. Gupta, et al.,

Nature Scientific Reports, 6, srep23708 2016)

184) Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on MBE-Grown WSe₂ Monolayers and Bilayers

(J. H. Park et al.,

ACS Nano, 10, 4258 2016)

183) Room temperature weak ferromagnetism in Sn_xMn_1-xSe2 2D films grown by molecular beam epitaxy

(S. Dong, et al.,

APL Materials, 4, 032601 2016)

179) Controllable growth of layered selenide and telluride heterostructures and superlattices using MBE

(S. Vishwanath et al.,

J. Mat. Res., 31, 900 2016)

2015

172) Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment

(R. Yan et al.,

Nano Letters, 15, 5791 2015)

167) Comprehensive structural and optical characterization of MBE-grown MoSe₂ on graphite, CaF₂, and graphene

(S. Vishwanath et al.,

2D Materials, 2, 024007 2015)

165) Anisotropic Thermal Conductivity in Single-Crystal beta-Gallium Oxide

(Z. Guo et al.,

Appl. Phys. Lett., 106, 111909 2015)

163) 2-dimensional heterojunction interlayer tunneling FETs (Thin-TFETs)

(M. Li et al.,

IEEE J. Electron Devices Society, 3, 200 2015)

161) Carrier statistics and quantum capacitance effects on mobility extraction in 2D crystal FETs

(N. Ma and D. Jena,

2D Materials, 2, 015003, 2015)

160) Synthesized multiwall MoS₂ nanotube and nanoribbon FETs

(S. Fathipour et al,

Appl. Phys. Lett., 106, 022114, 2015)

159) Graphene nanoribbon FETs on wafer-scale epitaxial graphene on SiC substrates

(W. Hwang et al,

APL Materials, 3, 011101, 2015)

2014

158) 2D Crystal Semiconductors: Intimate Contacts (News & Views)

(D. Jena, K. Banerjee, H. Xing

Nature Materials, 13, 1076 2014)

156) Exfoliated MoTe₂ Field-Effect Transistors

(S. Fathipour et al,

Appl. Phys. Lett., 105, 192101, 2014)

152) High-performance photocurrent generation from 2D WS₂ FETs

(S. H. Lee, D. Lee, W.-S. Hwang, E. Hwang, D. Jena, and W. J. Yoo,

Appl. Phys. Lett., 104, 193113, 2014)

147) Charge Scattering and Mobility in Atomically Thin Semiconductors

(N. Ma and D. Jena,

Phys. Rev. X, 4, 011043 2014)

146) High-Voltage Field-Effect Transistors with Wide-Bandgap Ga₂O₃ Nanomembranes

(Wan Sik Hwang et al.,

Appl. Phys. Lett., 104, 203111, 2014)

145) A Computational Study of Metal-Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

(J. Kang, W. Liu, D. Sarkar, D. Jena, and K. Banerjee,

Phys. Rev. X, 4, 031005, 2014)

141) Single particle transport in two-dimensional heterojunction interlayer tunneling field-effect transistor (THIN-TFET)

(M. Li et al.,

J. Appl. Phys. 115, 074508 2014)

135) Electronic transport properties of top-gated epitaxial graphene nanoribbon field-effect transistors on SiC wafers

(Wan Sik Hwang et al.,

J. Vac. Sci. Technol (b), 32, 012202 2014)

2013

133) High-Performance Few-Layer-MoS₂ Field-Effect-Transistor with Record Low Contact-Resistance

(W. Liu et al.,

IEDM Tech. Digest, 13, 499 2013)

132) Novel Logic Devices based on 2D Crystal Semiconductors: Opportunities and Challenges

(D. Jena et al.,

IEDM Tech. Digest, 13, 487 2013)

128) High-Performance, Highly Bendable MoS₂ Transistors with High-K Dielectrics for Flexible Low-Power Systems

(H-Y. Chang, et al.,

ACS Nano, 7, 5446, 2013)

127) Tunneling Transistors based on Graphene and 2D Crystals

(D. Jena,

Proceedings of the IEEE, 101, 1585, 2013)

126) Graphene reconfigurable THz optoelectronics

(B. Sensale-Rodriguez, et al.,

Proceedings of the IEEE, 101, 1705, 2013)

125) Interband tunneling in 2D crystal semiconductors

(N. Ma and D. Jena,

Appl. Phys. Lett., 102, 132102, 2013)

124) Role of metal contacts in designing high-performance n-type WSe₂ FETs

(W. Liu, et al.,

Nano Lett., 13, 1983, 2013)

122) Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide

(R. Yan et al.,

Appl. Phys. Lett., 102, 123106 2013)

121) Electrical noise and transport properties of graphene

(N. Sun, et al.,

J. Low. Temp. Phys., 172, 202 2013)

120) Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals

(H. Shi, et al.,

ACS Nano, 7, 1072, 2013)

117) SymFET: A proposed symmetric graphene tunneling field-effect transistor

(P. Zhao et al.,

IEEE Trans. Electron Dev., 60, 951, 2013)

116) Comparative study of chemically synthesized and exfoliated multilayer MoS₂ field-effect transistors

(Wan-Sik Hwang et al.,

Appl. Phys. Lett., 102, 043116, 2013)

113) Terahertz imaging employing graphene modulator arrays

(B. Sensale-Rodriguez, et al.,

Opt. Exp., 21, 2324, 2013)

2012

111) High-Mobility, Low-Power Thin-Film Transistors based on multilayer MoS₂ crystals

(S. Kim et al.,

Nature Comm., 3, 1011, 2012)

110) Broadband Graphene Terahertz Modulators enabled by Intraband Transitions

(B. Sensale-Rodriguez, R. Yan, M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, and H. Xing,

Nature Comm., 3, 780, 2012)

109) Multilayer Transition Metal Dichalcogenide Channel Thin-Film Transistors

(E. S. Kim et al.,

IEDM Tech. Digest, 12, 108 2012)

108) A Computational Study of Metal Contacts to Beyond-Graphene 2D Semiconductor Materials

(J. Kang et al.,

IEDM Tech. Digest, 12, 407 2012)

106) Efficient THz electro-absorption modulation employing graphene plasmonic structures

(B. Sensale-Rodriguez et al.,

Appl. Phys. Lett., 101, 261115 2012)

105) Graphene nanoribbon FETs for digital electronics: experiment and modeling

(K. Tahy et al.,

Int. J. of Circuit Theory, 41, 603, 2012)

103) High-Detectivity Multilayer MoS₂ Phototransistors with Spectral Response from UV to IR

(W. Choi et al.,

Adv. Mat., 24, 5832 2012)

101) Extraordinary control of THz beam reflectance in Graphene electro-absorption modulators

(B. Sensale-Rodriguez et al.,

Nano Lett., 12, 4518, 2012)

100) Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

(R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. Richter, A. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. Xing, D. Gundalch, and N. Nguyen

Appl. Phys. Lett., 101, 022105 2012)

98) Transistors with chemically synthesized layered semiconductor WS₂ exhibiting 10⁵ room temperature modulation and ambipolar behavior

(W.-S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. Xing, A. Seabaugh, and D. Jena,

Appl. Phys. Lett., 101, 013107 2012)

96) Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

(W.-S. Hwang, K. Tahy, X. Li, H. Xing, A. Seabaugh, C. Y. Sung, and D. Jena,

Appl. Phys. Lett., 100, 203107, 2012)

90) Fabrication of Top-Gated Epitaxial Graphene Nano-Ribbon FETs using Hydrogen-silsesquioxane (HSQ)

(W.-S. Hwang, K. Tahy, L. Nyakiti, V. Wheeler, R. Myers-Ward, C. Eddy, D. K. Gaskill, H. Xing, A. Seabaugh, and D. Jena,

J. Vac. Sci. Tech. (B), 30(3), 03D14, 2012)

89) Graphene

(D. Jena,

Springer Encyclopedia (review article), accepted, to appear, 2012)

88) Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions

(R. Feenstra, D. Jena, and G. Gu

J. Appl. Phys., 111, 043711, 2012)

2011

80) High-field transport in two-dimensional graphene

(T. Fang, A. Konar, H. Xing, and D. Jena,

Phys. Rev. B, 84, 125450, 2011)

79) Unique prospects of graphene-based THz modulators

(S. Sensale-Rodriguez, T. Fang, R. Yan, M. Kelly, D. Jena, L. Liu, and H. Xing,

Appl. Phys. Lett., 99, 113104, 2011)

77) Dielectric-environment mediated renormalization of many-body effects in a one-dimensional electron gas

(A. Konar, T. Fang, and D. Jena,

Phys. Rev. B, 84, 085422, 2011)

76) Studies of Intrinsic Hot Phonon Dynamics in Suspended Graphene by Transient Absorption Microscopy

(B. Gao, G. Hartland, T. Fang, M. Kelly, D. Jena, H. Xing, and L. Huang,

Nano Lett., 11 3184, 2011)

75) Thermally-limited current carrying ability of graphene nanoribbons

(A. Liao, J. Wu, X. Wang, K. Tahy, D. Jena, H. Dai, and E. Pop,

Phys. Rev. Lett., 106, 256801 2011)

72) Influence of Metal-Graphene Contacts on the Operation and Scalability of Graphene Field-Effect Transistors

(P. Zhao, Q. Zhang, D. Jena, and S. Koswatta,

IEEE Trans. Electron Devices, 58(9), 3170 2011)

2010

59) Effect of high-K dielectrics on charge transport in graphene-based field-effect transistors

(A. Konar, T. Fang, & D. Jena

Phys. Rev. B, 82, 115452, 2010)

55) Quantum Transport in Graphene Nanoribbons patterned by Metal Masks

(C. Lian, K. Tahy, T. Fang, G. Li, H. Xing, and D. Jena

Appl. Phys. Lett., 96, 101309, 2010)

2009

51) Hydrodynamic instability of confined two-dimensional electron flow in semiconductors

(W. R. C-Munoz, D. Jena, & M. Sen

J. Appl. Phys., 106, 014506, 2009)

48) A Theory for the High-Field Current Carrying Capacity of 1D Semiconductors

(D. Jena

J. Appl. Phys., 105, 123701, 2009)

47) Heat Transport Mechanisms in Superlattices

(Y. K. Koh, Y. Cao, D. Cahill, & D. Jena

Adv. Funct. Materials, 19, 610, 2009)

2008

46) Graphene Nanoribbon Tunnel Transistors

(Q. Zhang, T. Fang, A. Seabaugh, H. Xing, & D. Jena

IEEE Electron Device Lett., 29 (12), 1344, 2008)

45) Mobility in Semiconducting Graphene Nanoribbons: Phonon, Impurity, and Edge Roughness Scattering

(T. Fang, A. Konar, H. Xing, & D. Jena

Phys. Rev. B, 78, 205403, 2008)

43) Zener Tunneling in Semiconducting Nanotube and Graphene Nanoribbon p-n Junctions

(D. Jena, T. Fang, Q. Zhang, & H. Xing

Appl. Phys. Lett., 93, 112106, 2008)

33) Photocurrent Polarization Anisotropy of Randomly Oriented Nanowire Networks

(Y. Lu, V. Protasenko, D. Jena, H. Xing, & M. Kuno

Nano. Lett., 8, 1352, 2008)

2007

30) Tailoring the carrier mobility in semiconductor nanowires by remote dielectrics

(A. Konar & D. Jena

J. Appl. Phys., 102, 123705, 2007)

27) Polarization-sensitive photodetectors based on solution-synthesized semiconductor nanowire-based quantum-wire solids

(A. Singh, X. Li, G. Galantai, V. Protasenko, M. Kuno, H. Xing, & D. Jena

Nano Lett., 7 (10), 2999, 2007)

26) Carrier Statistics and Quantum Capacitance in Graphene Sheets and Ribbons

(T. Fang, A. Konar, H. Xing & D. Jena

Appl. Phys. Lett., 91, 092109, 2007)

25) Hydrodynamic instability of one-dimensional electron flow in semiconductors

(W. R. C-Munoz, M. Sen & D. Jena

J. Appl. Phys., 102, 023703, 2007)

22) Polarization anisotropy, frequency dependent emission, and transport properties of dielectrophoretically aligned CdSe nanowire arrays

(R. Zhou, H.-C. Chang, V. Protasenko, M. Kuno, A. Singh, D. Jena, & H. Xing

J. Appl. Phys., 101, 073704, 2007)

21) Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering

(D. Jena & A. Konar

Phys. Rev. Lett., 98, 136805, 2007) [In the News – a) NanoTech, b) Also featured in the Virtual Journal of Nanoscale Science and Technology]

2006

14) Ultrathin CdSe Nanowire FETs and their Optical Properties

(A. Khandelwal, D. Jena, J. Grebinski, K. Richter, and M. Kuno,

J. Electron. Mat., 35, 170, 2006)

2005

2004

As a graduate student @ UC Santa Barbara (Fall 1998 - Spring 2003)

2003

2002

2001

2000

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