Research inventions for future applications

 

While some of our group’s research have seen applications in industry, theory, modeling, and a bit of leap of faith allow us to conceive devices outside of available materials and processing technology of the time.  Here are a few examples.  Over time, ingenuity of the research community has brought some of them to fruition.

 

1.     GNRTFETs: 2008 proposal, and a realization.  Takes advantage of the unique property of 2D materials for energy-efficient electronic switches.

 

2.     TMDFETs: 2012 realization in collaboration with Samsung of the first 2D material channel FETs to show current saturation and near ideal switching.

 

3.     SymFETs: 2012 theory, proposal, and a realization.  Uses interlayer tunneling between 2D materials.  Related to BISFETs, and Moire lattices in twisted 2D layers.

 

4.     ThinTFETs: 2014 proposal, and a realization.  Uses interlayer tunneling between 2D materials for energy-efficient electronic switches.

 

5.     PiezoFETs: 2014 proposal using active gate barriers in polar semiconductors.

 

6.     GaN TFETs: 2016 proposal, patent, and a 2020 realization.  Uses high internal fields in polar semiconductors for energy-efficient electronic switches.

 

7.     LEFETs: 2018 patent, and a realization.  LEDs and FETs in the same device for photonic communications and LiFi.

 

8.     GOFETs: 2018 patent and a realization.  Gallium oxide power transistors for energy efficient electronics.

 

9.     UV LEDs/Lasers: 2018 patent and realizations using quantum structures and distributed polarization doping with GaN quantum dots in 2014 (link), and ultrathin GaN quantum wells in 2017 (link, link).

 

10.  UV LEDs/Lasers: 2018 patent, and realizations using distributed polarization doping with tunnel junctions in 2017 (link), and distributed polarization p-doping in 2017 (link).

 

11.  SOTFETs: 2020 collaborative proposal of the Spin-orbit torque FET as a logic/memory hybrid device for associative memories (link), and materials to realize them (link).

 

12.  FerroHEMTs: 2022 first realization. Polar semiconductor based ferroelectric transistors for RF/mm-wave electronic communications, digital electronics for logic, and non-volatility for memory - all in one device!

 

Stay tuned for more!

 

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