Books

Polarization Effects in Semiconductors: From Ab-Initio Theory to Device Applications

Springer, Dec 2007, edited by Colin Wood and Debdeep Jena. (Available from Amazon).

Journal Papers

· Get the preprints of papers posted on the arXivs.

· We have published in IEEE journals, IEDM/DRC, APL, Science, Nature journals, Physical Review journals, JAP, Nano Letters, etc.

· The complete list of papers below is periodically sorted into categories here (sorted list last updated mid-2017):

GaN materials and Devices

Deep-UV photonics

2D Crystals

Oxide Electronics

Sub-Boltzmann Switches

Theory and Modeling

2018

214) Degradation of GaN-on-GaN vertical diodes submitted to high current stress

(E. Fabris et al.,

Microelectronics Reliability, 88-90, 568, 2018).

213) Development of GaN Vertical Trench-MOSFET With MBE Regrown Channel

(W. Li et al.,

IEEE Transactions on Electron Devices, 65, 2558, 2018).

212) Comparison of unit cell coupling for grating-gate and high electron mobility transistor array THz resonant absorbers

(H. Condori Quispe et al.,

Journal of Applied Physics, 124, 093101, 2018).

211) Activation of buried p-GaN in MOCVD-regrown vertical structures

(W. Li et al.,

Applied Physics Letters, 113, 062105, 2018).

210) 75 Years of the Device Research Conference: A History Worth Repeating

(A. Franklin et al.,

IEEE Journal of the Electron Device Society, 6, 116, 2018).

209) Enhancement-Mode Ga₂O₃ Vertical Transistors With Breakdown Voltage >1 kV

(Z. Hu et al.,

IEEE Electron Device Letters, 39, 869, 2018).

208) Room temperature microwave oscillations in GaN/AlN resonant tunneling diodes with peak current densities up to 220 kA/cm²

(J. Encomendero et al.,

Applied Physics Letters, 112, 103101, 2018).

207) GaN/NbN epitaxial semiconductor/superconductor heterostructures

(R. Yan et al.,

Nature, 555, 183, 2018).

206) A New Holistic Model of 2-D Semiconductor FETs

(E. Marin et al.,

IEEE Transactions on Electron Devices, 65, 1239, 2018).

205) Steep Sub-Boltzmann Switching in AlGaN/GaN Phase-FETs With ALD VO₂

(A. Verma et al.,

IEEE Transactions on Electron Devices, 65, 945, 2018).

204) MBE growth of few-layer 2H-MoTe₂ on 3D substrates

(S. Vishwanath et al.,

Journal of Crystal Growth, 482, 61, 2018).

203) 234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes

(C. Liu et al.,

Applied Physics Letters, 112, 011101, 2018).

2017

202) Ultrawide Bandgap Semiconductors: Research Opportunities and Challenges

(J. Y. Tsao et al.,

Advanced Electronic Materials, 4, 1600501, 2017).

201) Adsorption-controlled growth of La-doped BaSnO₃ by molecular-beam epitaxy

(H. Paik et al.,

Applied Physics Letters Materials, 5, 116107, 2017).

200) New Tunneling Features in Polar III-Nitride Resonant Tunneling Diodes

(J. Encomendero et al.,

Physical Review X, 7, 041017, 2017).

199) Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

(S. M. Islam et al.,

Applied Physics Letters, 111, 091104, 2017).

198) Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells

(H. Condori Quispe et al.,

Applied Physics Letters, 111, 073102, 2017).

197) 1.1-kV vertical GaN pn diodes with p-GaN regrown by molecular beam epitaxy

(Z. Hu et al.,

IEEE Electron Device Letters, 38, 1071, 2017).

196) Single-crystal N-polar GaN p-n diodes by plasma-assisted molecular beam epitaxy

(Y. Cho et al.,

Applied Physics Letters, 110, 253506, 2017).

195) Electron mobility in polarization-doped Al_0-0.2GaN with a low concentration near 10¹⁷ /cm³

(M. Zhu et al.,

Applied Physics Letters, 110, 182102, 2017).

194) Hot electron transistor with van der Waals base-collector heterojunction and high-performance GaN emitter

(A. Zubair et al.,

Nano Letters, 17, 3089, 2017).

193) Physics and Polarization Characteristics of 298 nm AlN-delta-GaN Quantum Well UV LEDs

(C. Liu et al.,

Applied Physics Letters, 110, 071103, 2017).

192) Design and realization of GaN trench junction-barrier-Schottky-diodes (JBSD)

(W. Li et al.,

IEEE Transactions on Electron Devices, 64, 1635, 2017)

191) ICP-RIE etching of single-crystal beta-Ga₂O₃

(L. Zhang et al.,

Japanese Journal of Applied Physics, 56, 030304, 2017)

190) Strained GaN Quantum-Well FETs on Single-Crystal Bulk AlN Substrates

(M. Qi et al.,

Appl. Phys. Lett., 110, 063501 2017)

189) MBE-grown 232-270 nm deep-UV LEDs using monolayer-thin binary GaN/AlN quantum heterostructures

(S. M. Islam et al.,

Appl. Phys. Lett., 110, 041108 2017)

2016

188) Deep-UV Emission from Ultra-Thin GaN/AlN Heterostructures

(D. Bayerl et al.,

Appl. Phys. Lett., 109, 241102 2016)

187) Intrinsic electron mobility limits in beta-Ga₂O₃

(N. Ma et al.,

Appl. Phys. Lett., 109, 212101 2016)

186) Two-Dimensional Semiconductors for Transistors

(M. Chhowalla, D. Jena, and H. Zhang,

Nature Reviews, 1, 1-15 2016)

185) Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth

(P. Gupta, et al.,

Nature Scientific Reports, 6, srep23708 2016)

184) Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on MBE-Grown WSe₂ Monolayers and Bilayers

(J. H. Park et al.,

ACS Nano, 10, 4258 2016)

183) Room temperature weak ferromagnetism in Sn_xMn_1-xSe2 2D films grown by molecular beam epitaxy

(S. Dong, et al.,

APL Materials, 4, 032601 2016)

182) Large electron concentration modulation using capacitance enhancement in SrTiO₃/SmTiO₃ Fin-FETs

(A. Verma et al.,

Appl. Phys. Lett., 108, 183509 2016)

181) Sub-230 nm deep-UV emission from GaN quantum disks in AlN grown by a modified Stranski-Krastanov mode

(S. M. Islam et al.,

Jap. J. Appl. Phys., 55, 05FF06 2016)

180) High-quality InN films on GaN using graded InGaN buffers by MBE

(S. M. Islam et al.,

Jap. J. Appl. Phys., 55, 05FD12 2016)

179) Controllable growth of layered selenide and telluride heterostructures and superlattices using MBE

(S. Vishwanath et al.,

J. Mat. Res., 31, 900 2016)

178) 1.7 kV and 0.55 mOhm.cm² GaN p-n diodes on Bulk GaN substrates with Avalanche Capability

(K. Nomoto et al.,

IEEE EDL, 37, 161 2016)

177) Ultralow-Leakage AlGaN/GaN HEMTs on Si with Non-Alloyed Regrown Ohmic Contacts

(B. Song et al.,

IEEE EDL, 37, 16 2016)

2015

176) Near unity ideality factor and Shockley-Read_Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown

(Z. Hu et al.,

Appl. Phys. Lett., 92, 085111 2015)

175) High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy

(M. Qi et al.,

Appl. Phys. Lett., 107, 232101 2015)

174) Ferroelectric transition in compressively strained SrTiO₃ thin films

(A. Verma et al.,

Appl. Phys. Lett., 107, 192908 2015)

173) Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

(X. Yan et al.,

Appl. Phys. Lett., 107, 163504 2015)

172) Esaki Diodes in van der Waals Heterojunctions with Broken-Gap Energy Band Alignment

(R. Yan et al.,

Nano Letters, 15, 5791 2015)

171) Determination of the Mott-Hubbard gap in GdTiO₃

(L. Bjaalie et al.,

Physical Review B, 92, 085111 2015)

170) Localized surface phonon polariton resonances in polar gallium nitride

(K. Feng et al.,

Applied Physics Letters, 107, 081108 2015)

169) Transistor Switches using Active Piezoelectric Gate Barriers

(R. Jana et al.,

IEEE J. Expl. CDC, 1, 35 2015)

168) Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

(W. Li et al.,

IEEE J. Expl. CDC, 1, 28 2015)

167) Comprehensive structural and optical characterization of MBE-grown MoSe₂ on graphite, CaF₂, and graphene

(S. Vishwanath et al.,

2D Materials, 2, 024007 2015)

166) Low-temperature AlN growth by MBE and its application in HEMTs

(F. Faria et al.,

J. Crystal Growth, 425, 133 2015)

165) Anisotropic Thermal Conductivity in Single-Crystal beta-Gallium Oxide

(Z. Guo et al.,

Appl. Phys. Lett., 106, 111909 2015)

164) 1.9 kV AlGaN/GaN lateral Schottky barrier diodes on Silicon

(M. Zhu et al.,

IEEE Electron Dev. Lett., 36, 375 2015)

163) 2-dimensional heterojunction interlayer tunneling FETs (Thin-TFETs)

(M. Li et al.,

IEEE J. Electron Devices Society, 3, 200 2015)

162) Dual optical marker Raman characterization of strained GaN channels on AlN using AlN/GaN/AlN quantum wells and ¹⁵N isotopes

(M. Qi et al.,

Appl. Phys. Lett., 106, 041906 2015)

161) Carrier statistics and quantum capacitance effects on mobility extraction in 2D crystal FETs

(N. Ma and D. Jena,

2D Materials, 2, 015003, 2015)

160) Synthesized multiwall MoS₂ nanotube and nanoribbon FETs

(S. Fathipour et al,

Appl. Phys. Lett., 106, 022114, 2015)

159) Graphene nanoribbon FETs on wafer-scale epitaxial graphene on SiC substrates

(W. Hwang et al,

APL Materials, 3, 011101, 2015)

2014

158) 2D Crystal Semiconductors: Intimate Contacts (News & Views)

(D. Jena, K. Banerjee, H. Xing

Nature Materials, 13, 1076 2014)

157) Sub 60mV/decade Steep Transistors with Compliant Piezoelectric Gate Barriers

(R. Jana et al.,

IEDM Tech. Digest, 14, 347 2014)

156) Exfoliated MoTe₂ Field-Effect Transistors

(S. Fathipour et al,

Appl. Phys. Lett., 105, 192101, 2014)

155) Au-gated SrTiO₃ field-effect transistors with large electron concentration and current modulation

(A. Verma, S. Raghavan, S. Stemmer, and D. Jena,

Appl. Phys. Lett., 105, 113512, 2014)

154) Strain sensitivity in the nitrogen 1s NEXAFS spectra of gallium nitride

(A. Ritchie et al.,

Appl. Surf. Sci., 316, 232, 2014)

153) Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing

(Y. Yue, X. Yan, W. Li, H. G. Xing, D. Jena, and P .Fay,

J. Vac. Sci. Tech. B, 32, 061201, 2014)

152) High-performance photocurrent generation from 2D WS₂ FETs

(S. H. Lee, D. Lee, W.-S. Hwang, E. Hwang, D. Jena, and W. J. Yoo,

Appl. Phys. Lett., 104, 193113, 2014)

151) First-principles study of high-field related electronic behavior of group-III nitrides

(Q. Yan, E. Kioupakis, D. Jena, C. van de Walle,

Phys. Rev. B, 90, 121201(R), 2014)

150) Plasma-MBE growth conditions of AlGaN/GaN HEMTs on Silicon and their device characteristics with epitaxially regrown ohmic contacts

(S. Ganguly, J. Verma, H. G. Xing, and D. Jena,

Appl. Phys. Exp, 7, 105501, 2014)

149) Optimum band gap and supply voltage in tunnel FETs

(Q. Zhang et al.,

IEEE Trans. Electron Dev., 61, 2719, 2014)

148) Intrinsic Mobility Limiting Mechanisms in Strontium Titanate

(A. Verma, A. Kadjos, T. Cain, S. Stemmer, and D. Jena,

Phys. Rev. Lett., 112, 216601, 2014)

147) Charge Scattering and Mobility in Atomically Thin Semiconductors

(N. Ma and D. Jena,

Phys. Rev. X, 4, 011043 2014)

146) High-Voltage Field-Effect Transistors with Wide-Bandgap Ga₂O₃ Nanomembranes

(Wan Sik Hwang et al.,

Appl. Phys. Lett., 104, 203111, 2014)

145) A Computational Study of Metal-Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors

(J. Kang, W. Liu, D. Sarkar, D. Jena, and K. Banerjee,

Phys. Rev. X, 4, 031005, 2014)

144) GaN Heterostructure Barrier Diodes (HBD) exploiting Polarization-induced Delta-doping

(P. Zhao et al.,

IEEE Electron Dev. Lett., 35, 615, 2014)

143) Two-dimensional electron gases in strained quantum wells for AlN/GaN/AlN double heterostructures FETs on AlN

(G. Li et al.,

Appl. Phys. Lett. 104, 193506, 2014)

142) Two-dimensional electron transport in modulation-doped In_0.53Ga_0.47As/AlAs_0.56Sb_0.44 ultrathin quantum wells

(Cheng-Ying Huang, J. Law, H. Lu, D. Jena, M. J. W. Rodwell, and A. C. Gossard,

J. Appl. Phys. 115, 123711 2014)

141) Single particle transport in two-dimensional heterojunction interlayer tunneling field-effect transistor (THIN-TFET)

(M. Li et al.,

J. Appl. Phys. 115, 074508 2014)

140) Impact of CF₄ plasma treatment on threshold voltage and mobility in Al₂O₃/InAlN/GaN MOSHEMTs

(Z. Hu et al.,

Appl. Phys. Exp, 7, 031002 2014)

139) Tunnel-Injection Quantum Dot deep-UV LEDs with Polarization-Induced Doping in III-Nitride Heterostructures

(J. Verma et al.,

Appl. Phys. Lett., 104, 021105 2014)

138) AlGaN/GaN HEMTs on Silicon by MBE with regrown contacts and f_T=153 GHz

(S. Ganguly et al.,

Phys. Stat. Sol. (c), 11, 887, 2014)

137) Performance enhancement of InAlN/GaN HEMTs by KOH surface treatment

(S. Ganguly et al.,

Appl. Phys. Exp, 7, 034102 2014)

136) Effect of Fringing Capacitances on the RF Performance of GaN HEMTs with T-Gates

(B. Song et al.,

IEEE Trans. Electron Devices, 61, 747, 2014)

135) Electronic transport properties of top-gated epitaxial graphene nanoribbon field-effect transistors on SiC wafers

(Wan Sik Hwang et al.,

J. Vac. Sci. Technol (b), 32, 012202 2014)

2013

134) Dispersion- free operation in InAlN-based HEMTs with ultrathin or no passivation

(R. Wang et al.,

IEDM Tech. Digest, 13, 703 2013)

133) High-Performance Few-Layer-MoS₂ Field-Effect-Transistor with Record Low Contact-Resistance

(W. Liu et al.,

IEDM Tech. Digest, 13, 499 2013)

132) Novel Logic Devices based on 2D Crystal Semiconductors: Opportunities and Challenges

(D. Jena et al.,

IEDM Tech. Digest, 13, 487 2013)

131) On the possibility of sub 60 mV/decade subthreshold switching in piezoelectric gate barrier transistors

(R. Jana et al.,

Phys. Stat. Sol. (c), 10, 1469 2013)

130) Photoluminescence-Based Electron and Lattice Temperature Measurements in GaN-Based HEMTs

(J. A. Ferrer-Perez et al.,

J. Electronic Materials, Nov 2013)

129) Polarization-Induced GaN-on-Insulator E/D Mode p-Channel Heterostructure FETs

(G. Li et al.,

IEEE Electron Dev. Lett., 34, 852, 2013)

128) High-Performance, Highly Bendable MoS₂ Transistors with High-K Dielectrics for Flexible Low-Power Systems

(H-Y. Chang, et al.,

ACS Nano, 7, 5446, 2013)

127) Tunneling Transistors based on Graphene and 2D Crystals

(D. Jena,

Proceedings of the IEEE, 101, 1585, 2013)

126) Graphene reconfigurable THz optoelectronics

(B. Sensale-Rodriguez, et al.,

Proceedings of the IEEE, 101, 1705, 2013)

125) Interband tunneling in 2D crystal semiconductors

(N. Ma and D. Jena,

Appl. Phys. Lett., 102, 132102, 2013)

124) Role of metal contacts in designing high-performance n-type WSe₂ FETs

(W. Liu, et al.,

Nano Lett., 13, 1983, 2013)

123) Ultrascaled InAlN/GaN HEMTs with f_T of 400 GHz

(Y. Yue, et al.,

Jpn. J. Appl. Phys, 52, 08JN14, 2013)

122) Graphene as transparent electrode for direct observation of hole photoemission from silicon to oxide

(R. Yan et al.,

Appl. Phys. Lett., 102, 123106 2013)

121) Electrical noise and transport properties of graphene

(N. Sun, et al.,

J. Low. Temp. Phys., 172, 202 2013)

120) Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals

(H. Shi, et al.,

ACS Nano, 7, 1072, 2013)

119) Power amplification at THz via plasma wave excitation in RTD-gated HEMTs

(B. Sensale-Rodriguez, et al.,

IEEE Trans. THz. Sci. Tech., 3, 200, 2013)

118) InGaN channel high electron mobility transistors with InAlGaN barrier and ft/fmax or 260/220 GHz

(R. Wang, et al.,

Appl. Phys. Express, 6, 016503, 2013)

117) SymFET: A proposed symmetric graphene tunneling field-effect transistor

(P. Zhao et al.,

IEEE Trans. Electron Dev., 60, 951, 2013)

116) Comparative study of chemically synthesized and exfoliated multilayer MoS₂ field-effect transistors

(Wan-Sik Hwang et al.,

Appl. Phys. Lett., 102, 043116, 2013)

115) Quaternary barrier InAlGaN HEMTs with ft/fmax of 230/300 GHz

(R. Wang et al.,

IEEE Electron Dev. Lett., 34, 378 2013)

114) Tunnel-injection GaN quantum-dot ultraviolet light-emitting diodes

(J. Verma et al.,

Appl. Phys. Lett., 101, 032109 2013)

113) Terahertz imaging employing graphene modulator arrays

(B. Sensale-Rodriguez, et al.,

Opt. Exp., 21, 2324, 2013)

112) Time-delay analysis in high-speed gate-recessed E-Mode InAlN HEMTs

(B. Sensale-Rodriguez, et al.,

Solid State Electron., 80, 67, 2013)

2012

111) High-Mobility, Low-Power Thin-Film Transistors based on multilayer MoS₂ crystals

(S. Kim et al.,

Nature Comm., 3, 1011, 2012)

110) Broadband Graphene Terahertz Modulators enabled by Intraband Transitions

(B. Sensale-Rodriguez, R. Yan, M. Kelly, T. Fang, K. Tahy, W. S. Hwang, D. Jena, L. Liu, and H. Xing,

Nature Comm., 3, 780, 2012)

109) Multilayer Transition Metal Dichalcogenide Channel Thin-Film Transistors

(E. S. Kim et al.,

IEDM Tech. Digest, 12, 108 2012)

108) A Computational Study of Metal Contacts to Beyond-Graphene 2D Semiconductor Materials

(J. Kang et al.,

IEDM Tech. Digest, 12, 407 2012)

107) Polarization effects on gate leakage in InAlN/AlN/GaN HEMTs

(S. Ganguly et al.,

Appl. Phys. Lett., 101, 253519 2012)

106) Efficient THz electro-absorption modulation employing graphene plasmonic structures

(B. Sensale-Rodriguez et al.,

Appl. Phys. Lett., 101, 261115 2012)

105) Graphene nanoribbon FETs for digital electronics: experiment and modeling

(K. Tahy et al.,

Int. J. of Circuit Theory, 41, 603, 2012)

104) High aspect ratio features in poly(methylglutarimide) using EBL and solvent developers

(G. Karbasian et al.,

J. Vac. Sc. Tech. B, 30, 06FI01 2012)

103) High-Detectivity Multilayer MoS₂ Phototransistors with Spectral Response from UV to IR

(W. Choi et al.,

Adv. Mat., 24, 5832 2012)

102) Surface potential analysis of AlN/GaN heterostructures by electrochemical capacitance-voltage measurements

(C. Pietzka, G. Li, M. Alomari, H. Xing, D. Jena, and E. Kohn,

J. Appl. Phys., 112, 074508, 2012)

101) Extraordinary control of THz beam reflectance in Graphene electro-absorption modulators

(B. Sensale-Rodriguez et al.,

Nano Lett., 12, 4518, 2012)

100) Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy

(R. Yan, Q. Zhang, W. Li, I. Calizo, T. Shen, C. Richter, A. Hight-Walker, X. Liang, A. Seabaugh, D. Jena, H. Xing, D. Gundalch, and N. Nguyen

Appl. Phys. Lett., 101, 022105 2012)

99) Ultra-low resistance ohmic contacts to GaN with high Si doping concentrations grown by molecular beam epitaxy

(F. Faria, J. Guo, P. Zhao, G. Li, P. Kandaswamy, M. Wistey, H. Xing, and D. Jena,

Appl. Phys. Lett., 101, 032109 2012)

98) Transistors with chemically synthesized layered semiconductor WS₂ exhibiting 10⁵ room temperature modulation and ambipolar behavior

(W.-S. Hwang, M. Remskar, R. Yan, V. Protasenko, K. Tahy, S. D. Chae, P. Zhao, A. Konar, H. Xing, A. Seabaugh, and D. Jena,

Appl. Phys. Lett., 101, 013107 2012)

97) Enhanced THz detection in Resonant Tunnel Diode-Gated HEMTs

(B. Sensale-Rodriguez et al.,

ECS Trans., 49, 93, 2012)

96) Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene

(W.-S. Hwang, K. Tahy, X. Li, H. Xing, A. Seabaugh, C. Y. Sung, and D. Jena,

Appl. Phys. Lett., 100, 203107, 2012)

95) InAlN/AlN/GaN HEMTs with MBE-regrown contacts and f_T=370 GHz

(Y. Zhang, Z. Hu, J. Guo, B. Sensale-Rodriguez, G. Li, R. Wang, F. Faria, T. Fang, B. Song, X. Gao, S. Guo, T. Kosel, G. Snider, P. Fay, D. Jena, and H. Xing,

IEEE Electron Device Lett., 33, 988, 2012)

94) InGaN Channel High Electron Mobility Transistor Structures Grown by Metal Organic Chemical Vapor Deposition

(O. Laboutin, Y. Cao, W. Johnson, R. Wang, G. Li, D. Jena, and H. Xing,

Appl. Phys. Lett., 100, 121909, 2012)

93) Effect of Optical Phonon Scattering on the Performance of GaN Transistors

(T. Fang, R. Wang, H. Xing, S. Rajan, and D. Jena,

IEEE Electron Device Lett., 33, 709, 2012)

92) Ultra thin GaN-on-Insulator Quantum Well FETs with Regrown MBE Contacts

(G. Li, R. Wang, J. Guo, J. Verma, Z. Hu, Y. Yue, F. Faria, Y. Cao, M. Kelly, T. Kosel, H. Xing, and D. Jena,

IEEE Electron Device Lett., 33, 661, 2012)

91) MBE regrown ohmics in In_0.17AlN HEMTs with regrowth interface resistance of 0.05 ohm-mm

(J. Guo, G. Li, F. Faria, Y. Cao, R. Wang, J. Verma, X. Gao, S. Guo, E. Beam, A. Ketterson, M. Schuette, P. Saunier, M Wistey, D. Jena, and H. Xing,

IEEE Electron Device Lett., 33, 525, 2012)

90) Fabrication of Top-Gated Epitaxial Graphene Nano-Ribbon FETs using Hydrogen-silsesquioxane (HSQ)

(W.-S. Hwang, K. Tahy, L. Nyakiti, V. Wheeler, R. Myers-Ward, C. Eddy, D. K. Gaskill, H. Xing, A. Seabaugh, and D. Jena,

J. Vac. Sci. Tech. (B), 30(3), 03D14, 2012)

89) Graphene

(D. Jena,

Springer Encyclopedia (review article), accepted, to appear, 2012)

88) Single-Particle Tunneling in Doped Graphene-Insulator-Graphene Junctions

(R. Feenstra, D. Jena, and G. Gu

J. Appl. Phys., 111, 043711, 2012)

87) Charge transport in non-polar and semi-polar III-V nitride heterostructures

(A. Konar, A. Verma, T. Fang, P. Zhao, R. Jana, and D. Jena,

Semicond. Sci. Technol., 27, 024018, 2012)

86) In-situ X-Ray photoelectron spectroscopy of trimethly aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates

(P. Sivasubramani et al.,

Phys. Stat. Solidi.(RRL), 6(1), 22 2012)

2011

85) FET THz detectors operating in the quantum capacitance limited region

(B. Sensale-Rodriguez, L. Liu, R. Wang, D. Jena, and H. Xing,

Int. Journal of High Speed Electronics and Systems, 20(3), 597, 2011)

84) The resurgence of III-Nitride materials development: AlInN HEMTs and GaN-on-Si

(O. Laboutin et al.,

ECS Transactions, 41(8), 301, 2011)

83) Molecular Beam Epitaxial growth of Gallium Nitride Nanowires on Atomic-Layer Deposited Aluminum Oxide

(K. Goodman, V. Protasenko, J. Verma, T. Kosel, H. Xing, and D. Jena,

J. Crystal Growth, 334, 113, 2011)

82) Presence and origin of interface charges at atomic-layer deposited Al₂O₃/III-nitride heterojunctions

(S. Ganguly, J. Verma, G. Li, T. Zimmermann, H. Xing, and D. Jena,

Appl. Phys. Lett., 99, 193504, 2011)

81) N-Polar III-nitride quantum well light emitting diodes with polarization-induced doping

(J. Verma, J. Simon, V. Protasenko, T. Kosel, H. Xing, and D. Jena,

Appl. Phys. Lett., 99, 171104, 2011)

80) High-field transport in two-dimensional graphene

(T. Fang, A. Konar, H. Xing, and D. Jena,

Phys. Rev. B, 84, 125450, 2011)

79) Unique prospects of graphene-based THz modulators

(S. Sensale-Rodriguez, T. Fang, R. Yan, M. Kelly, D. Jena, L. Liu, and H. Xing,

Appl. Phys. Lett., 99, 113104, 2011)

78) Si-containing Recessed Ohmic Contacts and 210 GHz Quaternary Barrier InAlGaN High-Electron-Mobility Transistors

(R. Wang, et al.,

Appl. Phys. Express, 4, 096502, 2011)

77) Dielectric-environment mediated renormalization of many-body effects in a one-dimensional electron gas

(A. Konar, T. Fang, and D. Jena,

Phys. Rev. B, 84, 085422, 2011)

76) Studies of Intrinsic Hot Phonon Dynamics in Suspended Graphene by Transient Absorption Microscopy

(B. Gao, G. Hartland, T. Fang, M. Kelly, D. Jena, H. Xing, and L. Huang,

Nano Lett., 11 3184, 2011)

75) Thermally-limited current carrying ability of graphene nanoribbons

(A. Liao, J. Wu, X. Wang, K. Tahy, D. Jena, H. Dai, and E. Pop,

Phys. Rev. Lett., 106, 256801 2011)

74) Stark-Effect Scattering in Rough Quantum Wells

(R. Jana, and D. Jena

Appl. Phys. Lett., 99, 012104 2011)

73) 220 GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

(R. Wang, G. Li, J. Verma, B. Sensale-Rodriguez, T. Fang, J. Guo, Z. Hu, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing,

IEEE Electron Device Lett., 32(9), 1215 2011)

72) Influence of Metal-Graphene Contacts on the Operation and Scalability of Graphene Field-Effect Transistors

(P. Zhao, Q. Zhang, D. Jena, and S. Koswatta,

IEEE Trans. Electron Devices, 58(9), 3170 2011)

71) 210 GHz InAlN HEMTs with dielectric-free passivation

(R. Wang, G. Li, O. Laboutin, Y. Cao, W. Johnson, G. Snider, P. Fay, D. Jena, and H. Xing,

IEEE Electron Device Lett., 32(7), 892 2011)

70) Subcritical Barrier AlN/GaN E/D-Mode HFETs and Inverters

(T. Zimmermann et al.,

Phys. Stat. Solidi.(a), 208, 1620 2011)

69) Metal-Face InAlN/AlN/GaN HEMTs with regrown Ohmic contacts by Molecular Beam Epitaxy

(J. Guo, Y. Cao, C. Lian, T. Zimmermann, G. Li, J. Verma, X. Gao, S. Guo, P. Saunier, M. Wistey, D. Jena, and Huili Xing

Phys. Stat. Solidi.(a), 208, 1617 2011)

68) Polarization Engineering in Group-III Nitride Heterostructures: New Opportunities for Device Design

(D. Jena, J. Simon, K. Wang, Y. Cao, K. Goodman, J. Verma, S. Ganguly, G. Li, K. Karda, V. Protasenko, C. Lian, T. Kosel, P. Fay, and H. Xing

Phys. Stat. Solidi.(a), 208, 1511 2011)

67) MBE growth of high conductivity single and multiple AlN/GaN heterojunctions

(Y. Cao, K. Wang, G. Li, T. Kosel, H. Xing, and D. Jena

J. Cryst. Growth, 323, 529 2011)

66) Green luminescence of InGaN nanowires grown on Silicon substrates by MBE

(K. Goodman, V. Protasenko, J. Verma, T. Kosel, H. Xing, and D. Jena,

J. Appl. Phys., 109, 084336 2011)

65) Enhancement-Mode InAlN/AlN/GaN HEMTs with 10^-12A/mm leakage current and 10¹² on/off current ratio

(R. Wang, P. Saunier, Y. Tang, T. Fang, X. Gao, S. Guo, G. Snider, P. Fay, D. Jena, and H. Xing

IEEE Electron Device Lett., 32 (3), 309 2011)

64) Charged basal stacking fault scattering in nitride semiconductors

(A. Konar, T. Fang, N. Sun, and D. Jena

Appl. Phys. Lett., 98, 022109 2011)

2010

63) High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

(G. Li, Y. Cao, H. Xing, and D. Jena

Appl. Phys. Lett., 97, 222110 2010)

62) Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors

(Y. Cao, H. Xing, and D. Jena

Appl. Phys. Lett., 97, 222116 2010)

61) Anisotropic charge transport in nonpolar GaN quantum wells: Polarization-induced line charge and interface roughness scattering

(A. Konar, T. Fang, N. Sun, and D. Jena

Phys. Rev. B, 82, 193301 2010)

60) Gate-recessed Enhancement-Mode InAlN/AlN/GaN HEMTs with 1.9 A/mm Drain Current Density and 800 mS/mm Transconductance

(R. Wang, P. Saunier, X. Xing, C. Lian, X. Gao, S. Guo, G. Snider, P. Fay, D. Jena, and H. Xing

IEEE Electron Device Lett., 31(12), 1383 2010)

59) Effect of high-K dielectrics on charge transport in graphene-based field-effect transistors

(A. Konar, T. Fang, & D. Jena

Phys. Rev. B, 82, 115452, 2010)

58) Threshold Voltage Control in Al_0.72Ga_0.28N/AlN/GaN HEMTs by Work-Function Engineering

(G. Li, T. Zimmermann, Y. Cao, C. Lian, X. Xing, R. Wang, P. Fay, H. Xing, and D. Jena,

IEEE Electron Device Lett., 31 (9), 954 2010)

57) Short-period AlN/GaN p-type superlattices: Hole transport usage in p-n Junctions

(J. Simon, H. Xing, and D. Jena,

Phys. Stat. Solidi (C), 7 (10), 2386 2010)

56) Temperature-dependence of hydrodynamic instabilities in 1-dimensional electron flow in semiconductors

(W. R. C-Munoz, D. Jena, & M. Sen

J. Appl. Phys., 107, 074504 2010)

55) Quantum Transport in Graphene Nanoribbons patterned by Metal Masks

(C. Lian, K. Tahy, T. Fang, G. Li, H. Xing, and D. Jena

Appl. Phys. Lett., 96, 101309, 2010)

54) Polarization-engineered removal of buffer leakage for GaN Transistors

(Y. Cao, T. Zimmermann, H. Xing & D. Jena

Appl. Phys. Lett., 96, 042102 2010)

53) Polarization Induced Hole Doping in Wide Bandgap Uniaxial Semiconductor Heterostructures

(J. Simon, V. Protasenko, C. Lian, H. Xing & D. Jena

Science, 327, 60, 2010) Press: MIT Tech Review

2009

52) Polarization Induced Zener Tunnel Junctions in Wide Bandgap Heterostructures

(J. Simon, Z. Zhang, K. Goodman, H. Xing, T. Kosel, P. Fay & D. Jena

Phys. Rev. Lett., 103, 026801, 2009)

51) Hydrodynamic instability of confined two-dimensional electron flow in semiconductors

(W. R. C-Munoz, D. Jena, & M. Sen

J. Appl. Phys., 106, 014506, 2009)

50) Investigations of hot electrons and hot phonons generated in an AlN/GaN High-Electron Mobility Transistor

(G. Xu, S. K. Tripathy, X. Mu, Y. J. Ding, K. Wang, Y. Cao, D. Jena, & J. B. Khurgin

Laser Physics, 19, 745, 2009)

49) 4 nm AlN Barrier all-binary HFETs with SiN_x Gate Dielectric

(T. Zimermann, Y. Cao, D. Jena, P. Saunier, H. Xing

Int. J. Jigh Speed Electronics & Systems, 19, 153, 2009)

48) A Theory for the High-Field Current Carrying Capacity of 1D Semiconductors

(D. Jena

J. Appl. Phys., 105, 123701, 2009)

47) Heat Transport Mechanisms in Superlattices

(Y. K. Koh, Y. Cao, D. Cahill, & D. Jena

Adv. Funct. Materials, 19, 610, 2009)

2008

46) Graphene Nanoribbon Tunnel Transistors

(Q. Zhang, T. Fang, A. Seabaugh, H. Xing, & D. Jena

IEEE Electron Device Lett., 29 (12), 1344, 2008)

45) Mobility in Semiconducting Graphene Nanoribbons: Phonon, Impurity, and Edge Roughness Scattering

(T. Fang, A. Konar, H. Xing, & D. Jena

Phys. Rev. B, 78, 205403, 2008)

44) GaN and InGaN Nanowires on Si Substrates by Ga-Droplet Molecular Beam Epitaxy

(K. Goodman, K. Wang, X. Luo, J. Simon, T. Kosel, & D. Jena

Mater. Res. Soc. Symp. Proc. Vol. 1080, 1080-O08-04, 2008)

43) Zener Tunneling in Semiconducting Nanotube and Graphene Nanoribbon p-n Junctions

(D. Jena, T. Fang, Q. Zhang, & H. Xing

Appl. Phys. Lett., 93, 112106, 2008)

42) Stokes and anti-Stokes resonant Raman scattering from biased AlN/GaN heterostructures

(G. Xu, S. Tripathy, X. Mu, Y. Ding, K. Wang, Y. Cao, D. Jena & J. Khurgin

Appl. Phys. Lett., 93, 051912, 2008)

41) Isotope disorder of phonons in GaN and its beneficial effect in high power field effect transistors

(J. Khurgin, D. Jena & Y. Ding

Appl. Phys. Lett., 93, 032110, 2008)

40) AlN/GaN insulated gate HEMTs with 2.3 A/mm output current and 480 mS/mm transconductance

(T. Zimmermann, D. Deen, Y. Cao, J. Simon, P. Fay, D. Jena, & H. Xing

IEEE Electron Device Lett., 29 (7) 661, 2008)

39) Effect of growth conditions on the conductivity of Mg doped p-type GaN by Molecular Beam Epitaxy

(J. Simon & D. Jena

Phys. Stat. Sol. A, 205 1074 2008)

38) Structural and transport properties of InN grown on GaN by MBE

(K. Wang, T. Kosel & D. Jena

Phys. Stat. Sol. C, 5 1811, 2008)

37) 2.3 nm AlN/GaN HEMTs with Insulated Gates

(D. Deen, T. Zimmermann, Y. Cao, D. Jena, & H. Xing

Phys. Stat. Sol. C, 5 2047, 2008)

36) Electron transport properties of low sheet-resistance two-dimensional electron gases in ultrathin AlN/GaN heterojunctions grown by MBE

(Y. Cao, K. Wang & D. Jena

Phys. Stat. Sol. C, 5 1873, 2008)

35) Formation of Ohmic contacts to ultrathin AlN/GaN HEMTs

(T. Zimmermann, D. Deen, Y. Cao, D. Jena, & H. Xing

Phys. Stat. Sol. C, 5 2030, 2008)

34) Very Low Sheet Resistance and Shubnikov de-Haas Oscillations in Two-Dimensional Electron Gases at Ultrathin Binary AlN/GaN Heterojunctions

(Y. Cao, K. Wang, A. Orlov, H. Xing & D. Jena

Appl. Phys. Lett., 92, 152112, 2008)

33) Photocurrent Polarization Anisotropy of Randomly Oriented Nanowire Networks

(Y. Lu, V. Protasenko, D. Jena, H. Xing, & M. Kuno

Nano. Lett., 8, 1352, 2008)

32) Evidence of hot electrons generated from an AlN/GaN HEMT

(S. Tripathy, G. Xu, X. Mu, Y. Ding, K. Wang, Y. Cao, D. Jena, & J. Khurgin

Appl. Phys. Lett., 92, 013513, 2008)

2007

31) Hot phonon effect on electron velocity saturation in GaN: A second look

(J. Khurgin, Y. Ding, & D. Jena

Appl. Phys. Lett., 91, 252104, 2007)

30) Tailoring the carrier mobility in semiconductor nanowires by remote dielectrics

(A. Konar & D. Jena

J. Appl. Phys., 102, 123705, 2007)

29) Conduction band offset at the InN/GaN heterojunction

(K. Wang, C. Lian, N. Su, D. Jena, & J. Timler

Appl. Phys. Lett., 91, 232117, 2007)

28) MBE-grown Ultra-Shallow AlN/GaN HFET Technology

(H. Xing, D. Deen, Y. Cao, T. Zimmerman, P. Fay, & D. Jena

ECS Transactions, 11, 233, 2007)

27) Polarization-sensitive photodetectors based on solution-synthesized semiconductor nanowire-based quantum-wire solids

(A. Singh, X. Li, G. Galantai, V. Protasenko, M. Kuno, H. Xing, & D. Jena

Nano Lett., 7 (10), 2999, 2007)

26) Carrier Statistics and Quantum Capacitance in Graphene Sheets and Ribbons

(T. Fang, A. Konar, H. Xing & D. Jena

Appl. Phys. Lett., 91, 092109, 2007)

25) Hydrodynamic instability of one-dimensional electron flow in semiconductors

(W. R. C-Munoz, M. Sen & D. Jena

J. Appl. Phys., 102, 023703, 2007)

24) A High-Mobility Window for Two-Dimensional Electron Gases at Ultrathin AlN/GaN Heterojunctions

(Y. Cao & D. Jena

Appl. Phys. Lett., 90, 182112, 2007)

23) Resonant Terahertz generation from InN thin films

(X. Mu, Y. J. Ding, K. Wang, D. Jena & Y. B. Zotova

Opt. Lett., 32, 1432, 2007)

22) Polarization anisotropy, frequency dependent emission, and transport properties of dielectrophoretically aligned CdSe nanowire arrays

(R. Zhou, H.-C. Chang, V. Protasenko, M. Kuno, A. Singh, D. Jena, & H. Xing

J. Appl. Phys., 101, 073704, 2007)

21) Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering

(D. Jena & A. Konar

Phys. Rev. Lett., 98, 136805, 2007) [In the News – a) NanoTech, b) Also featured in the Virtual Journal of Nanoscale Science and Technology]

2006

20) Compositional modulation and optical emission in AlGaN epitaxial films

(M. Gao, S. Bradley, Y. Cao, D. Jena, Y. Lin, S. Ringel, H. Hwang, W. Schaff, & L. Brillson

J. Appl. Phys., 100, 103512, 2006)

19) Hot Phonons in Si-Doped GaN

(J. Liberis, M. Ramonas, O. Kiprijanovic, A. Matulionis, N. Goel, J. Simon, K. Wang, H. Xing, & D. Jena,

Appl. Phys. Lett., 89, 202117, 2006)

18) Effect of dislocation scattering on the transport properties of InN grown on GaN substrate by Molecular Beam Epitaxy

(K. Wang, Y. Cao, J. Simon, J. Zhang, A. Mintairov, J. Merz, D. Hall, T. Kosel, & D. Jena,

Appl. Phys. Lett., 89, 162110, 2006)

17) Optical study of hot-electron transport in GaN: Signatures of the hot-phonon effect

(K. Wang, J. Simon, N. Goel & D. Jena,

Appl. Phys. Lett., 88, 022103, 2006)

16) Carrier transport and confinement in polarization-induced 3-D electron slabs: Importance of alloy scattering

(J. Simon, K. Wang, H. Xing, D. Jena & S. Rajan,

Appl. Phys. Lett., 88, 042109, 2006)

15) Electron mobility in graded AlGaN alloys

(S. Rajan, S. DenBaars, U. Mishra, H. Xing. & D. Jena,

Appl. Phys. Lett., 88, 042103, 2006)

14) Ultrathin CdSe Nanowire FETs and their Optical Properties

(A. Khandelwal, D. Jena, J. Grebinski, K. Richter, and M. Kuno,

J. Electron. Mat., 35, 170, 2006)

2004

13) Spin scattering by dislocations in III-V Semiconductors

(D. Jena,

Phys. Rev. B 70, 245203, 2004) [Also featured in the Virtual Journal of Nanoscience and Technology, Dec 2004 issue.]

12) Dipole Scattering in highly polar semiconductor alloys

(W. Zhao and D. Jena,

J. Appl. Phys. 96, 2095, 2004)

11) AlGaN/GaN polarization-doped field-effect transistor for microwave power applications

(Siddharth Rajan, Huili Xing, Steve DenBaars, Umesh K. Mishra, and D. Jena,

Appl. Phys. Lett., 84, 1591, 2004)

As a graduate student @ UC Santa Barbara (Fall 1998 - Spring 2003)

2003

10) Magnetotransport properties of a polarization-doped three-dimensional electron slab

(D. Jena, S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher,

Phys. Rev. B 67 153306, 2003)

9) Explanation of anomalously high β in GaN-based bipolar transistors

(H. Xing, D. Jena, M. J. W. Rodwell, and U. K. Mishra,

IEEE Elect. Dev. Lett. 24 4, 2003)

8) Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN

(D. Jena, S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher,

Phys. Stat. Sol. C, 0 2339, 2003)

2002

7) Quantum and classical scattering times due to charged dislocations in an impure electron gas

(D. Jena and U. K. Mishra,

Phys. Rev. B 66 241307, 2002)

6) Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys

(D. Jena, S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, and I. P. Smorchkova,

Appl. Phys. Lett., 81 4395, 2002)

5) Effect of p-doped overlayer thickness on RF-dispersion in GaN JFETs

(A.Jimenez, D. Buttari, D. Jena, R. Coffie, S. Heikman, N. Q. Zhang, L. Shen, E. Calleja, E. Munoz, J. Speck, and U.K. Mishra,

IEEE Electron Device Letters, 23 306, 2002

4) Effect of scattering by strain fields surrounding edge dislocations on electron transport in 2DEGs

(D. Jena and U. K. Mishra,

Appl. Phys. Lett., 80 64, 2002 )

2001

3) Electron transport in III-V nitride 2DEGs

(D. Jena, I. Smorchkova, A. Gossard, U. K. Mishra,

Phys. Stat. Sol. B, 228 617, 2001)

2000

2) Dipole scattering in polarization induced two-dimensional electron gases

(D. Jena, A. C. Gossard, U. K. Mishra,

J. Appl. Phys., 88 4734, 2000)

1) Dislocation scattering in a two-dimensional electron gas

(D. Jena, A. C. Gossard, U. K. Mishra,

Appl. Phys. Lett., 76 1707, 2000)

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